Department of Physics, National Taiwan University , Taipei 106, Taiwan.
Institute of Physics, Academia Sinica , Taipei 105, Taiwan.
ACS Nano. 2018 Feb 27;12(2):1089-1095. doi: 10.1021/acsnano.7b06004. Epub 2018 Jan 31.
We map electronic states, band gaps, and interface-bound charges at termination-engineered BiFeO/LaSrMnO interfaces using atomically resolved cross-sectional scanning tunneling microscopy. We identify a delicate interplay of different correlated physical effects and relate these to the ferroelectric and magnetic interface properties tuned by engineering the atomic layer stacking sequence at the interfaces. This study highlights the importance of a direct atomically resolved access to electronic interface states for understanding the intriguing interface properties in complex oxides.
我们使用原子分辨的横截面扫描隧道显微镜绘制了在终止工程 BiFeO/LaSrMnO 界面处的电子态、能带隙和界面束缚电荷。我们确定了不同相关物理效应的微妙相互作用，并将这些与通过工程化界面处的原子层堆叠顺序来调谐的铁电和磁界面性质相关联。这项研究强调了直接原子分辨访问电子界面态对于理解复杂氧化物中有趣的界面性质的重要性。
