Zhong Shuomin, Liu Taijun, Huang Jifu, Ma Yungui
Opt Express. 2018 Feb 5;26(3):2231-2241. doi: 10.1364/OE.26.002231.
We theoretically demonstrate a giant power enhancement effect for a line current source in a ε-near-zero (ENZ) two-dimensional (2D) shell with proper physical dimensions. Compared with the traditional high-ε dielectric approach, the ENZ scheme has the prominent advantage that the radiation performance is less sensitive to the outer radius of the shell, which is critically important for real applications where micro-nano fabrications are often involved. The enhancing performance is independent on the position of the source inside the ENZ shell and could be substantially strengthened by incorporating more sources, while the quasi-omnidirectional radiation pattern could be managed to have negligible variance, as evidenced by a particular example with an inner radius of the shell equal to 0.156λ. Compared with the single source case, two identical sources with a phase difference less than 134° will raise the total radiation power more than 4 folds and the maxima will be about 30 when they are in phase. The field analysis shows that this quasi-isotropic radiation enhancement is mainly contributed by the amplification of the isotropic zeroth order mode radiation while the higher orders with anisotropic emission patterns are effectively suppressed by the specifically designed ENZ shell. In the end, a practicable device employing 4H-silicon carbide (4H-SiC) naturally available with ENZ properties in the mid-infrared regime is numerically proposed, which could provide more than 10 times of radiation enhancement through optimizing the permittivity of the inner dielectric cylinder. These results may find very important applications in the design of novel devices for mid-infrared photon sources or detectors.
我们从理论上证明了,对于具有适当物理尺寸的ε近零(ENZ)二维(2D)壳层中的线电流源,存在巨大的功率增强效应。与传统的高介电常数介质方法相比,ENZ方案具有显著优势,即辐射性能对外壳外径的敏感度较低,这对于常常涉及微纳制造的实际应用至关重要。增强性能与ENZ壳层内源的位置无关,并且通过增加更多源可显著增强,同时准全向辐射方向图的变化可设法忽略不计,壳层内半径等于0.156λ的特定示例证明了这一点。与单源情况相比,两个相位差小于134°的相同源同相时,总辐射功率将提高4倍以上,最大值约为30。场分析表明,这种准各向同性辐射增强主要由各向同性零阶模辐射的放大贡献,而具有各向异性发射方向图的高阶模则被专门设计的ENZ壳层有效抑制。最后,数值上提出了一种在中红外波段采用天然具有ENZ特性的4H碳化硅(4H-SiC)的实用器件,通过优化内部介质圆柱体的介电常数,该器件可提供超过10倍的辐射增强。这些结果可能在中红外光子源或探测器新型器件的设计中找到非常重要的应用。