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用于锂二次电池阳极的硅/还原氧化石墨烯复合材料的合成与表征

Synthesis and Characterization of Silicon/Reduced Graphene Oxide Composites as Anodes for Lithium Secondary Batteries.

作者信息

Lee Sang-Hoon, Kim Yong-Jae, Nam Ye-Seol, Park Seong-Hyo, Lee Hochun, Hyun Yura, Lee Chang-Seop

机构信息

Department of Chemistry, Keimyung University, Daegu, 42601, Korea.

Department of Energy System Engineering, DGIST, Daegu, 42988, Korea.

出版信息

J Nanosci Nanotechnol. 2018 Jul 1;18(7):5026-5032. doi: 10.1166/jnn.2018.15324.

Abstract

Silicon (Si) is one of the most attractive anode materials for lithium secondary batteries because of its large theoretical capacity, high safety, low cost and environmental benignity. However, Si-based anode material needs to overcome the structural change of the solid-electrolyte interphase due to the large volume change during cycling. To resolve these problems of composites by exploiting the superior conductivity, large specific surface area and flexibility of graphene, we have synthesized reduced graphene oxide (rGO)/Si composite electrode via a simple dip-coating method. Nickel foam is used as a current collector and template for the electrode fabrication. At 0.03 wt%, Si concentration, the rGO/Si composite anode presented the excellent cycle performance with large reversible capacity (778 mAh g-1 after 100 cycles). The characteristics of the rGO/Si composites were analyzed by scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), Raman and X-ray photoelectron spectroscopy (XPS). The improved anode performance of the rGO/Si composite anode is ascribed to the rGO serving as a buffer layer, thereby preventing the volume expansion of Si nanoparticles, and provide facile electron pathways.

摘要

硅(Si)因其具有大的理论容量、高安全性、低成本和环境友好性,是锂二次电池最具吸引力的负极材料之一。然而,由于在循环过程中体积变化大,硅基负极材料需要克服固体电解质界面的结构变化。为了通过利用石墨烯的优异导电性、大比表面积和柔韧性来解决复合材料的这些问题,我们通过一种简单的浸涂法合成了还原氧化石墨烯(rGO)/硅复合电极。泡沫镍用作集流体和电极制造的模板。在硅浓度为0.03 wt%时,rGO/硅复合负极表现出优异的循环性能,具有大的可逆容量(100次循环后为778 mAh g-1)。通过扫描电子显微镜(SEM)、能量色散光谱(EDS)、拉曼光谱和X射线光电子能谱(XPS)对rGO/硅复合材料的特性进行了分析。rGO/硅复合负极阳极性能的改善归因于rGO作为缓冲层,从而防止硅纳米颗粒的体积膨胀,并提供便捷的电子传导途径。

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