Li Jie, Zhang Jia, Chen Lianxi, Wang Yu, Liu Zhenhui
School of Food Engineering, Wuchang Institute of Technology, Wuhan 430065, P. R. China.
School of Food and Pharmaceutical Engineering, Light Industry Division, Hubei University of Technology, Wuhan 430068, P. R. China.
J Nanosci Nanotechnol. 2018 Apr 1;18(4):2914-2920. doi: 10.1166/jnn.2018.14535.
A new effective surface poly(1-vinyl-2-pyrrolidone) (PVP) grafted layer protected selective etching strategy has been used for preparing vinyl functionalized porous silica nanospheres (V-PSNSs). The main reaction mechanism was relied on the vinyl groups distributed on the surface of outer vinyl silica nanospheres (V-SiO2) which can be polymerized with another vinyl monomer, such as 1-vinyl-2-pyrrolidone (VP), in the presence of initiator. It was observed from the research results that only grafting PVP on the surface of outer vinyl silica nanospheres (V-SiO2) can V-PSNSs be obtained, because grafting PVP was able to protect outer V-SiO2 from being etched prior to inner pure silica (sSiO2). In addition, effect of the amounts of sSiO2@V-SiO2 as another monomer substrate on the formation of PVP grafted sSiO2@V-SiO2 (sSiO2@V-SiO2/PVP) was discussed. The results showed that the less of the sSiO2@V-SiO2 amounts, the thinner of the PVP grafted layer on the surface of sSiO2@V-SiO2, the poorer protection ability of the surface. In the present study, V-PSNSs with 29 m2g-1 of BET surface areas and 0.1 cm3g-1 pore volumes were successfully synthesized by grafting 0.3 g of VP on the surface of 0.3 g of sSiO2@V-SiO2 and subsequent etching.
一种新型有效的表面聚(1-乙烯基-2-吡咯烷酮)(PVP)接枝层保护的选择性蚀刻策略已被用于制备乙烯基官能化的多孔二氧化硅纳米球(V-PSNSs)。主要反应机理依赖于分布在外层乙烯基二氧化硅纳米球(V-SiO2)表面的乙烯基,在引发剂存在下,这些乙烯基可以与另一种乙烯基单体,如1-乙烯基-2-吡咯烷酮(VP)发生聚合反应。从研究结果中观察到,只有在外层乙烯基二氧化硅纳米球(V-SiO2)表面接枝PVP才能得到V-PSNSs,因为接枝PVP能够保护外层V-SiO2在内部纯二氧化硅(sSiO2)之前不被蚀刻。此外,还讨论了作为另一种单体底物的sSiO2@V-SiO2的量对PVP接枝的sSiO2@V-SiO2(sSiO2@V-SiO2/PVP)形成的影响。结果表明,sSiO2@V-SiO2的量越少,sSiO2@V-SiO2表面的PVP接枝层越薄,表面的保护能力越差。在本研究中,通过在0.3 g sSiO2@V-SiO2表面接枝0.3 g VP并随后蚀刻,成功合成了比表面积为29 m2g-1、孔体积为0.1 cm3g-1的V-PSNSs。