Department of Materials Science and Engineering , Northwestern University , Evanston , Illinois 60208 , United States.
Department of Materials Science and Engineering , University of Virginia , Charlottesville , Virginia 22904 , United States.
ACS Appl Mater Interfaces. 2018 Mar 14;10(10):9136-9146. doi: 10.1021/acsami.7b18539. Epub 2018 Mar 5.
The classic models of metal oxidation developed by Wagner and Cabrera and Mott presuppose the existence of a planar oxide film and develop expressions for the rate at which the film thickens. Missing from those models is a description of how that initially planar film forms. Using scanning tunneling microscopy, we study the growth of NiO islands on the (100) surface of a Ni-5Cr alloy during the oxidation regime where the initial planar film is formed as oxide islands. The island height and area distributions as a function of the oxygen exposure in Langmuir (1 L = 10 Torr s) are measured. Lateral island growth and thickening occur as seemingly separate processes, and after a critical thickness of ≈0.4 nm is achieved, growth is purely in the lateral direction. We develop a surface diffusion model for the evolution of the island size distribution that accounts for the lateral growth and coalescence of the NiO islands. Our results indicate that the oxygen surface diffusion screening length [Formula: see text] controls the island evolution. The screening length is found to be 0.3-0.4 nm, which suggests that the processes leading to island growth are highly localized to the island edge.
瓦格纳(Wagner)、卡布雷拉(Cabrera)和莫特(Mott)提出的经典金属氧化模型假定存在平面氧化膜,并推导出膜增厚速率的表达式。这些模型中缺少对初始平面膜如何形成的描述。我们使用扫描隧道显微镜研究了在氧化条件下 NiO 岛在 Ni-5Cr 合金(100)表面上的生长,其中初始平面膜形成氧化岛。在 Langmuir(1 L = 10 Torr s)中测量了氧暴露量作为函数的岛高和面积分布。横向岛的生长和增厚似乎是作为独立的过程发生的,并且在达到约 0.4 nm 的临界厚度后,生长纯粹是在横向方向上进行的。我们为岛尺寸分布的演化开发了一个表面扩散模型,该模型考虑了 NiO 岛的横向生长和合并。我们的结果表明,氧表面扩散屏蔽长度[Formula: see text]控制着岛的演化。发现屏蔽长度为 0.3-0.4 nm,这表明导致岛生长的过程高度集中在岛的边缘。