Vishwakarma Manoj, Karakulina Olesia M, Abakumov Artem M, Hadermann Joke, Mehta B R
Thin Film Laboratory, Department of Physics, IIT Delhi 110016, New Delhi, India.
EMAT, University of Antwerp, Groenenborgerlaan 171, B-2020, Belgium.
J Nanosci Nanotechnol. 2018 Mar 1;18(3):1688-1695. doi: 10.1166/jnn.2018.14261.
The presence of secondary phases is one of the main issues that hinder the growth of pure kesterite Cu2ZnSnS4 (CZTS) based thin films with suitable electronic and junction properties for efficient solar cell devices. In this work, CZTS thin films with varied Zn and Sn content have been prepared by RF-power controlled co-sputtering deposition using Cu, ZnS and SnS targets and a subsequent sulphurization step. Detailed TEM investigations show that the film shows a layered structure with the majority of the top layer being the kesterite phase. Depending on the initial thin film composition, either about ~1 μm Cu-rich and Zn-poor kesterite or stoichiometric CZTS is formed as top layer. X-ray diffraction, Raman spectroscopy and transmission electron microscopy reveal the presence of Cu2-xS, ZnS and SnO2 minor secondary phases in the form of nanoinclusions or nanoparticles or intermediate layers.
第二相的存在是阻碍具有适合高效太阳能电池器件的电子和结特性的纯硫锡铜矿Cu2ZnSnS4（CZTS）基薄膜生长的主要问题之一。在这项工作中，通过使用Cu、ZnS和SnS靶材的射频功率控制共溅射沉积以及随后的硫化步骤制备了具有不同Zn和Sn含量的CZTS薄膜。详细的透射电子显微镜研究表明，该薄膜呈现出层状结构，顶层的大部分为硫锡铜矿相。根据初始薄膜组成，顶层会形成约1μm富铜贫锌的硫锡铜矿或化学计量比的CZTS。X射线衍射、拉曼光谱和透射电子显微镜揭示了以纳米夹杂物、纳米颗粒或中间层形式存在的Cu2-xS、ZnS和SnO2次要第二相。
