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一种由CuSnS/ZnS叠层合成CuZnSnS薄膜的两步磁控溅射法。

A Two-Step Magnetron Sputtering Approach for the Synthesis of CuZnSnS Films from CuSnS\ZnS Stacks.

作者信息

Zaki Mohamed Yassine, Sava Florinel, Simandan Iosif-Daniel, Buruiana Angel Theodor, Stavarache Ionel, Bocirnea Amelia Elena, Mihai Claudia, Velea Alin, Galca Aurelian-Catalin

机构信息

National Institute of Materials Physics, Atomistilor 405A, Magurele 077125, Romania.

Faculty of Physics, University of Bucharest, Atomistilor 405A, Magurele 077125, Romania.

出版信息

ACS Omega. 2022 Jun 27;7(27):23800-23814. doi: 10.1021/acsomega.2c02475. eCollection 2022 Jul 12.

Abstract

CuZnSnS (CZTS) is regarded as one of the emerging materials for next-generation thin film solar cells. However, its synthesis is complex, and obtaining a single-phase CZTS thin film is difficult. This work reports the elaboration of CuZnSnS thin films by a sequential magnetron sputtering deposition of CuSnS (CTS) and ZnS as stacked films. Initially, the CTS films were prepared on a soda lime glass substrate by annealing Cu and SnS stacked layers. Second, ZnS was deposited by magnetron sputtering on the CTS films. The CTS\ZnS stacks were then annealed in Sn + S or S atmospheres. The tetragonal CZTS structure was obtained and confirmed by grazing incidence X-ray diffraction and Raman spectroscopy. The morphological and compositional characteristics, measured by scanning electron microscopy and energy-dispersive spectroscopy, revealed large grains and dense surfaces with the elemental composition close to the intended stoichiometry. Additional X-ray photoemission spectroscopy measurements were performed to determine the surface chemistry and particularities of the obtained films. The optical properties, determined using conventional spectroscopy, showed optimal absorber layer band gap values ranging between 1.38 and 1.50 eV. The electrical measurements showed that all the films are p-type with high carrier concentrations in the range of 10 to 10 cm. This new synthesis route for CZTS opens the way to obtain high-quality films by an industry-compatible method.

摘要

铜锌锡硫(CZTS)被视为下一代薄膜太阳能电池的新兴材料之一。然而,其合成过程复杂,且难以获得单相的CZTS薄膜。本文报道了通过依次磁控溅射沉积CuSnS(CTS)和ZnS作为堆叠膜来制备CuZnSnS薄膜的方法。首先,通过对Cu和SnS堆叠层进行退火,在钠钙玻璃基板上制备CTS薄膜。其次,通过磁控溅射在CTS薄膜上沉积ZnS。然后将CTS/ZnS堆叠膜在Sn + S或S气氛中退火。通过掠入射X射线衍射和拉曼光谱获得并确认了四方相的CZTS结构。通过扫描电子显微镜和能量色散光谱测量的形态和成分特征表明,晶粒较大且表面致密,元素组成接近预期的化学计量比。还进行了额外的X射线光电子能谱测量,以确定所得薄膜的表面化学性质和特性。使用传统光谱法测定的光学性质表明,最佳吸收层带隙值在1.38至1.50 eV之间。电学测量表明,所有薄膜均为p型,载流子浓度较高,在10至10 cm范围内。这种新的CZTS合成路线为通过工业兼容方法获得高质量薄膜开辟了道路。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c7f0/9281322/fd4b70baad04/ao2c02475_0002.jpg

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