Oh Teresa
Department of Semiconductor Engineering, Cheongju University, 298 Daesungro Chungwonku, Cheongju, 28503, Korea.
J Nanosci Nanotechnol. 2018 Mar 1;18(3):1833-1836. doi: 10.1166/jnn.2018.14962.
ZTO was prepared on SiOC/ITO glass and the electrical characteristics were analyzed in accordance with the annealing temperature to research the temperature dependence and an amorphous structure. SiOC annealed at 150 °C as a gate insulator became an amorphous structure. The ZTO annealed at 150 °C had the capacitance without any variation. However, the capacitance of ZTO on SiOC annealed at 150 °C was increased due to the reduction of energy loss. ZTO/SiOC transistor was observed the ambipolar transfer characteristics with high stability and mobility in accordance with the decrement of drain voltages as a result of tunneling effect. Therefore it was obtained that the SiOC annealed at 150 °C means the highest Schottky barrier (SB) at the interface of ZTO/SiOC as the optimization parameter.
ZTO制备在SiOC/ITO玻璃上，并根据退火温度分析其电学特性，以研究温度依赖性和非晶结构。在150°C退火的SiOC作为栅极绝缘体形成了非晶结构。在150°C退火的ZTO具有恒定的电容。然而，由于能量损失的减少，在150°C退火的SiOC上的ZTO电容增加。由于隧穿效应，随着漏极电压的降低，观察到ZTO/SiOC晶体管具有高稳定性和迁移率的双极传输特性。因此，得出在150°C退火的SiOC作为优化参数意味着ZTO/SiOC界面处的肖特基势垒（SB）最高。
