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一种用于白光发光二极管的尺寸可调的CdSe和CdSe/CdS核壳量子点的无膦合成路线。

A Phosphine-Free Route to Size-Adjustable CdSe and CdSe/CdS Core-Shell Quantum Dots for White-Light-Emitting Diodes.

作者信息

Zhang Yugang, Li Guopeng, Zhang Ting, Song Zihang, Wang Hui, Zhang Zhongping, Jiang Yang

机构信息

School of Materials Science and Engineering, Hefei University of Technology, Hefei, Anhui, 230009, P. R. China.

School of Chemistry, Chemical Engineering and Life Science, Chaohu University, Hefei, 238000, P. R. China.

出版信息

J Nanosci Nanotechnol. 2018 Mar 1;18(3):1864-1869. doi: 10.1166/jnn.2018.13793.

Abstract

The selenium dioxide was used as the precursor to synthesize wide-size-ranged CdSe quantum dots (2.4-5.7 nm) via hot-injection route. The CdSe quantum dots are featured with high crystalline, monodisperse, zinc blende structure and wide emission region (530-635 nm). In order to improve the stability and quantum yield, a phosphine-free single-molecular precursor approach is used to obtain CdSe/CdS core/shell quantum dots. The CdSe/CdS quantum dots are highly fluorescent with quantum yield up to 65%, and persist the good monodispersity and high crystallinity. Moreover, the quantum dots white light-emitting-diodes are fabricated by using the resultant red emission core/shell quantum dots and Y3Al5O12:Ce3+ yellow phosphors as color-conversion layers on a blue InGaN chip. The prepared light-emitting-diodes show good performance with CIE-1931 coordinated of (0.3583, 0.3349), an Ra of 92.9, and a Tc of 4410 K at 20 mA, which indicate that the combination of red-emission QDs and yellow phophors as a promising approach to obtain warm WLEDs with good color rendering.

摘要

以二氧化硒为前驱体,通过热注入法合成了尺寸范围较宽的CdSe量子点(2.4 - 5.7 nm)。CdSe量子点具有高结晶性、单分散性、闪锌矿结构以及宽发射区域(530 - 635 nm)。为了提高稳定性和量子产率,采用无膦单分子前驱体方法制备了CdSe/CdS核壳量子点。CdSe/CdS量子点具有高荧光性,量子产率高达65%,并保持良好的单分散性和高结晶性。此外,通过将所得的红色发射核壳量子点和Y3Al5O12:Ce3 +黄色荧光粉作为颜色转换层,在蓝色InGaN芯片上制备了量子点白光发光二极管。所制备的发光二极管表现出良好的性能,在20 mA时,CIE - 1931坐标为(0.3583, 0.3349),显色指数Ra为92.9,色温Tc为4410 K,这表明红色发射量子点和黄色荧光粉的组合是获得具有良好显色性的暖白光发光二极管的一种有前景的方法。

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