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掺有Gd₂O₃纳米粒子的铝锗硅酸盐玻璃光纤在氙灯照射下的紫外光致发光

UV Photoluminescence of Alumino-Germano-Silicate Glass Optical Fiber Incorporated with Gd₂O₃ Nano-Particles Upon Illumination of Xenon-Lamp.

作者信息

Ju Seongmin, Linganna Kadathala, Kim Bok Hyeon, Boo Seongjae, An Yong Ho, Han Won-Taek

机构信息

School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju, 61005, Korea.

Advanced Photonics Research Institute, Gwangju Institute of Science and Technology, Gwangju, 61005, Korea.

出版信息

J Nanosci Nanotechnol. 2018 Mar 1;18(3):2006-2009. doi: 10.1166/jnn.2018.14945.

Abstract

Alumino-germano-silicate glass optical fiber incorporated with Gd2O3 nano-particles (NPs) was developed by using the modified chemical vapor deposition and the drawing process. The formation of spherical Gd2O3 NPs in the fiber core with average diameter of 10.8 nm was confirmed by the TEM. The distinct absorption peaks in the fiber preform appearing in the UV region at 205, 247, 253, 274, and 312 nm were due to the incorporated Gd2O3 NPs via reorganization of the seven 4f electrons into various multiplets of Gd ions. In the case of the optical fiber obtained by drawing of the preform at high temperature about 2150 °C, absorption peaks due to Gd2O3 NPs were found to appear at 383 and 455 nm, which were red-shifted from 274 and 312 nm of the preform, respectively, and it may be due to increase in the size of Gd2O3 NPs after the drawing process. To investigate the photoluminescence (PL) property for UV sensor applications, the PL of the fiber was obtained by illumination of the Xenon-lamp. A PL band appeared in the wavelength band from 370 nm to 450 nm, centering at about 400 nm, which can be attributed to the presence of Gd2O3 NPs embedded in the fiber core. It was also found that the PL intensity at 400 nm showed linear dependence with the excitation power from 0 to 400 W.

摘要

采用改进的化学气相沉积法和拉丝工艺制备了掺有Gd2O3纳米颗粒(NPs)的铝锗硅酸盐玻璃光纤。通过透射电子显微镜(TEM)确认了在光纤纤芯中形成了平均直径为10.8 nm的球形Gd2O3 NPs。光纤预制棒在紫外区域205、247、253、274和312 nm处出现的明显吸收峰是由于掺入的Gd2O3 NPs通过将7个4f电子重新组合成Gd离子的各种多重态所致。对于在约2150℃的高温下拉制预制棒得到的光纤,发现由于Gd2O3 NPs引起的吸收峰出现在383和455 nm处,分别比预制棒的274和312 nm发生了红移,这可能是由于拉制过程后Gd2O3 NPs尺寸增大所致。为了研究用于紫外传感器应用的光致发光(PL)特性,通过氙灯照射获得了光纤的PL。在370 nm至450 nm的波长带中出现了一个PL带,中心波长约为400 nm,这可归因于嵌入光纤纤芯中的Gd2O3 NPs的存在。还发现400 nm处的PL强度与0至400 W的激发功率呈线性关系。

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