Advanced Materials Division , Korea Research Institute of Chemical Technology , 141 Gajeong-ro, Yuseong-gu , Daejeon 34114 , Republic of Korea.
Department of Advanced Materials and Chemical Engineering , UST-KRICT School , 217 Gajeong-ro, Yuseong-gu , Daejeon 34114 , Republic of Korea.
ACS Appl Mater Interfaces. 2018 Mar 14;10(10):8893-8900. doi: 10.1021/acsami.7b18044. Epub 2018 Mar 2.
Simple but exceptionally efficient 4-diphenylaminocarbazole host material, 4-DPACz, is presented and compared with its positional isomer, 1-DPACz. The shift of diphenylamino substituent from the 1-position to 4-position of carbazole resulted in an increase in the HOMO energy level as well as an increase in triplet energy level. Having a high triplet energy level (2.76 eV) and well-matched HOMO energy level (-5.61 eV), 4-DPACz showed reduced driving voltage and higher efficiencies for solution-processed green PhOLEDs compated to PVK as well as 1-DPACz. Maximum luminous, power, and external quantum efficiencies reaching to 47.9 cd A, 25.2 lm W, and 14.3%, respectively, were achieved with a device configuration of [ITO/PEDOT:PSS/4-DPACz:Ir(mppy)/TPBi/CsF/Al]. Additional enhancement of efficiencies of 4-DPACz was verified when incorporating another dopant, Ir(Si-bppy)(acac), resulting in 59.1 cd A, 29.5 lm W, and 15.8%. Furthermore, reduced efficiency roll-off was clearly observed for 4-DPACz compared with PVK. Such improved device characteristics of 4-DPACz were attributed to its high hole mobility and charge balance inside the emitting layer therof. The excellent results using such a simple-structured 4-DPACz could promote various applications of this 4-DPACz unit as a building block structure for further possible oligomeric, dendritic, and polymeric materials.
简单但效率极高的 4-二苯氨基咔唑主体材料 4-DPACz 被提出并与它的位置异构体 1-DPACz 进行了比较。二苯氨基取代基从咔唑的 1-位移动到 4-位,导致 HOMO 能级升高,三重态能级升高。具有高三重态能级(2.76 eV)和匹配的 HOMO 能级(-5.61 eV),4-DPACz 显示出与 PVK 以及 1-DPACz 相比,溶液处理的绿色 PhOLED 的驱动电压降低和效率提高。采用 ITO/PEDOT:PSS/4-DPACz:Ir(mppy)/TPBi/CsF/Al 的器件结构,可获得最大亮度、功率和外量子效率分别为 47.9 cd A、25.2 lm W 和 14.3%。当掺入另一种掺杂剂 Ir(Si-bppy)(acac)时,4-DPACz 的效率得到进一步提高,达到 59.1 cd A、29.5 lm W 和 15.8%。此外,与 PVK 相比,4-DPACz 的效率滚降明显减少。4-DPACz 的器件特性得到改善归因于其在发射层中的空穴迁移率和电荷平衡较高。使用这种结构简单的 4-DPACz 获得的优异结果可以促进该 4-DPACz 单元作为构建块结构的各种应用,进一步开发可能的低聚物、树枝状和聚合物材料。