Department of Energy Science & Engineering , Daegu Gyeongbuk Institute of Science & Technology (DGIST) , Daegu 42988 , Republic of Korea.
ACS Appl Mater Interfaces. 2018 Mar 14;10(10):8405-8410. doi: 10.1021/acsami.8b01437. Epub 2018 Mar 2.
Here, we introduce a method of tuning the high-detectivity spectra of the organic photodiode (OPD) to fabricate a thin-film filter-less full-color image sensor. The strategically introduced PIN junction enables a selective activation of excitons generated from the photons with low extinction coefficient in the active layer such that the separated holes/electrons can contribute to the external current. In addition, we show that a well-defined PIN junction blocks the injection of nonallowed charge carriers, leading to very low dark current and near-ideal diode characteristics. Consequently, the high specific detectivity over 1.0 × 10 Jones are observed from R/G/B-selective thin-film OPDs.
在这里,我们介绍了一种调节有机光电二极管(OPD)高灵敏度光谱的方法,以制造无薄膜滤光片的全色图像传感器。通过引入策略性的 PIN 结,可以选择性地激活活性层中低消光系数光子产生的激子,从而使分离的空穴/电子可以对外电流做出贡献。此外,我们还表明,明确的 PIN 结可以阻止不允许的电荷载流子的注入,从而导致非常低的暗电流和近乎理想的二极管特性。因此,从 R/G/B 选择性薄膜 OPD 中观察到了超过 1.0×10 的高比探测率。