Department of Chemical Engineering , Pohang University of Science and Technology , Pohang 790-784 , South Korea.
ACS Appl Mater Interfaces. 2018 Mar 21;10(11):9602-9611. doi: 10.1021/acsami.7b19171. Epub 2018 Mar 12.
A phase-separation method has been developed to control the semiconductor thickness and molecular arrangement via the semiconducting/insulating polymer blend system. The thickness of the poly(3-hexylthiophene) film has been regulated from 10.5 ± 1.4 nm down to 1.9 ± 0.8 nm with a favorable self-assembly degree and the mobility ranging from 0.21 to 0.03 cm V s. The ultrathin films show high bias stability and weak decay after 24 days with a bottom-gate configuration. Benefited from a good molecular order, the films have low activation energy and a 2D charge transport profile in semiconductor layers. Moreover, this blending process can be used as a general strategy of thickness control in flexible low-voltage devices and donor-acceptor-conjugated polymers.
已经开发出一种相分离方法，通过半导体/绝缘聚合物共混体系来控制半导体的厚度和分子排列。通过调节聚（3-己基噻吩）薄膜的厚度，从 10.5 ± 1.4nm 降低至 1.9 ± 0.8nm，同时保持良好的自组装程度和迁移率在 0.21 到 0.03cmV s 之间。具有底栅结构的超薄薄膜具有高偏压稳定性和弱衰减，经过 24 天后，衰减率小于 10%。得益于良好的分子有序性，薄膜在半导体层中具有低的激活能和 2D 电荷输运特性。此外，这种共混过程可以作为一种通用的策略，用于控制柔性低压器件和给体-受体共轭聚合物的厚度。
