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采用片上谐振器表征的2.0微米波长硅阵列波导光栅。

Silicon arrayed waveguide gratings at 2.0-μm wavelength characterized with an on-chip resonator.

作者信息

Stanton Eric J, Volet Nicolas, Bowers John E

出版信息

Opt Lett. 2018 Mar 1;43(5):1135-1138. doi: 10.1364/OL.43.001135.

DOI:10.1364/OL.43.001135
PMID:29489798
Abstract

Low-loss arrayed waveguide gratings (AWGs) are demonstrated at a 2.0-μm wavelength. These devices promote rapidly developing photonic applications, supported by the recent development of mid-infrared lasers integrated on silicon (Si). Multi-spectral photonic integrated circuits at 2.0-μm are envisioned since the AWGs are fabricated with the 500-nm-thick Si-on-insulator platform compatible with recently demonstrated lasers and semiconductor optical amplifiers on Si. Characterization with the AWG-ring method improves the on-chip transmission uncertainty to ∼6% compared to the conventional method with an uncertainty of ∼53%. Channel losses of ∼2.4  dB are found, with -31  dB crosstalk per channel. Fully integrated multi-spectral sources at 2.0 μm with pump lasers, low-loss multiplexers, and an output amplifier are now feasible.

摘要

低损耗阵列波导光栅(AWG)在2.0微米波长下得到了验证。这些器件推动了光子应用的快速发展,这得益于近期集成在硅(Si)上的中红外激光器的发展。由于AWG是在与近期在硅上展示的激光器和半导体光放大器兼容的500纳米厚绝缘体上硅平台上制造的,因此设想了2.0微米的多光谱光子集成电路。与不确定性约为53%的传统方法相比,采用AWG环法进行表征可将片上传输不确定性提高到约6%。发现通道损耗约为2.4分贝,每个通道的串扰为-31分贝。现在,配备泵浦激光器、低损耗复用器和输出放大器的2.0微米全集成多光谱源已切实可行。

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