Reshmi S, Akshaya M V, Satpati Biswarup, Basu Palash Kumar, Bhattacharjee K
Department of Physics, Indian Institute of Space Science and Technology (IIST), Thiruvananthapuram 695 547, Kerala, India.
Nanotechnology. 2018 May 18;29(20):205604. doi: 10.1088/1361-6528/aab3c3. Epub 2018 Mar 2.
Coplanar heterojunctions composed of van der Waals layered materials with different structural polymorphs have drawn immense interest recently due to low contact resistance and high carrier injection rate owing to low Schottky barrier height. Present research has largely focused on efficient exfoliation of these layered materials and their restacking to achieve better performances. We present here a microwave assisted easy, fast and efficient route to induce high concentration of metallic 1T phase in the original 2H matrix of exfoliated MoS layers and thus facilitating the formation of a 1T-2H coplanar superlattice phase. High resolution transmission electron microscopy (HRTEM) investigations reveal formation of highly crystalline 1T-2H hybridized structure with sharp interface and disclose the evidence of surface ripplocations within the same exfoliated layer of MoS. In this work, the structural stability of 1T-2H superlattice phase during HRTEM measurements under an electron beam of energy 300 keV is reported. This structural stability could be either associated to the change in electronic configuration due to induction of the restacked hybridized phase with 1T- and 2H-regions or to the formation of the surface ripplocations. Surface ripplocations can act as an additional source of scattering centers to the electron beam and also it is possible that a pulse train of propagating ripplocations can sweep out the defects via interaction from specific areas of MoS sheets.
由具有不同结构多晶型的范德华层状材料组成的共面异质结,由于低肖特基势垒高度导致的低接触电阻和高载流子注入率,近来引起了极大的关注。目前的研究主要集中在这些层状材料的高效剥离及其重新堆叠以实现更好的性能。我们在此提出一种微波辅助的简便、快速且高效的方法,以在剥离的MoS层的原始2H基体中诱导高浓度的金属1T相,从而促进1T-2H共面超晶格相的形成。高分辨率透射电子显微镜(HRTEM)研究揭示了具有清晰界面的高度结晶的1T-2H杂化结构的形成,并揭示了在MoS的同一剥离层内表面位错的证据。在这项工作中,报道了在300 keV能量的电子束下HRTEM测量期间1T-2H超晶格相的结构稳定性。这种结构稳定性可能与由于诱导具有1T和2H区域的重新堆叠杂化相导致的电子构型变化有关,或者与表面位错的形成有关。表面位错可以作为电子束散射中心的额外来源,并且传播位错的脉冲序列也有可能通过与MoS片材特定区域的相互作用清除缺陷。