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基于石墨烯的拓扑绝缘体异质结构中产生的自旋转移转矩。

Spin-transfer torque generated in graphene based topological insulator heterostructures.

作者信息

Zhang Qingtian, Chan K S, Li Jingbo

机构信息

School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, People's Republic of China.

Department of Physics, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, People's Republic of China.

出版信息

Sci Rep. 2018 Mar 12;8(1):4343. doi: 10.1038/s41598-018-22680-4.

Abstract

We studied the spin-transfer torque (STT) in graphene based normal-metal/topological-insulator/ferromagnet heterostructures (N/TI/F), which is induced by the helical spin-polarized current in the quantum spin Hall insulator. We found that the STT is comparable in magnitude to the STT in ferromagnetic-normal- ferromagnetic graphene junction, while not requiring additional ferromagnetic layer with fixed magnetization, which makes it advantageous for the manipulation of magnetic devices in spintronics. More interestingly, the STT is very robust in our proposed nanostructure, as it is immune to changes in the geometry due to an asymmetrically notch or the presence of random nanopores in the quantum spin Hall insulator. Our theoretical prediction suggests that graphene based quantum spin Hall insulator could be used for very efficient magnetization manipulation for magnetic materials.

摘要

我们研究了基于石墨烯的正常金属/拓扑绝缘体/铁磁体异质结构(N/TI/F)中的自旋转移力矩(STT),其由量子自旋霍尔绝缘体中的螺旋自旋极化电流诱导产生。我们发现,该STT的大小与铁磁-正常-铁磁石墨烯结中的STT相当,同时不需要额外具有固定磁化强度的铁磁层,这使其在自旋电子学中对磁器件的操控具有优势。更有趣的是,我们所提出的纳米结构中的STT非常稳健,因为它不受量子自旋霍尔绝缘体中不对称缺口或随机纳米孔的存在所导致的几何形状变化的影响。我们的理论预测表明,基于石墨烯的量子自旋霍尔绝缘体可用于对磁性材料进行非常高效的磁化操控。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6d1b/5847555/24d90585c0df/41598_2018_22680_Fig1_HTML.jpg

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