Mogi Masataka, Yasuda Kenji, Fujimura Reika, Yoshimi Ryutaro, Ogawa Naoki, Tsukazaki Atsushi, Kawamura Minoru, Takahashi Kei S, Kawasaki Masashi, Tokura Yoshinori
Department of Applied Physics and Quantum Phase Electronics Center (QPEC), University of Tokyo, Bunkyo-ku, Tokyo, Japan.
RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama, Japan.
Nat Commun. 2021 Mar 3;12(1):1404. doi: 10.1038/s41467-021-21672-9.
Electrical manipulation of magnetization could be an essential function for energy-efficient spintronics technology. A magnetic topological insulator, possessing a magnetically gapped surface state with spin-polarized electrons, not only exhibits exotic topological phases relevant to the quantum anomalous Hall state but also enables the electrical control of its magnetic state at the surface. Here, we demonstrate efficient current-induced switching of the surface ferromagnetism in hetero-bilayers consisting of the topological insulator (BiSb)Te and the ferromagnetic insulator CrGeTe, where the proximity-induced ferromagnetic surface states play two roles: efficient charge-to-spin current conversion and emergence of large anomalous Hall effect. The sign reversal of the surface ferromagnetic states with current injection is clearly observed, accompanying the nearly full magnetization reversal in the adjacent insulating CrGeTe layer of an optimal thickness range. The present results may facilitate an electrical control of dissipationless topological-current circuits.
对磁化进行电操纵可能是节能自旋电子学技术的一项基本功能。磁性拓扑绝缘体具有带自旋极化电子的磁能隙表面态,不仅展现出与量子反常霍尔态相关的奇异拓扑相,还能实现对其表面磁态的电控制。在此,我们展示了在由拓扑绝缘体(BiSb)Te和铁磁绝缘体CrGeTe组成的异质双层中,表面铁磁性可通过电流高效诱导切换,其中近邻诱导的铁磁表面态发挥两个作用:高效的电荷到自旋电流转换以及大反常霍尔效应的出现。随着电流注入,表面铁磁态的符号反转清晰可见,同时在最佳厚度范围的相邻绝缘CrGeTe层中几乎实现了完全磁化反转。目前的结果可能有助于对无耗散拓扑电流电路进行电控制。