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硅烯纳米带对硫基有毒气体分子的吸附与解离:高性能气体传感器与催化剂的探索

Adsorption and dissociation of sulfur-based toxic gas molecules on silicene nanoribbons: a quest for high-performance gas sensors and catalysts.

作者信息

Walia Gurleen Kaur, Randhawa Deep Kamal Kaur

机构信息

Department of Electronics and Communication Engineering, Guru Nanak Dev University, Regional Campus, Ladhewali Road, Jalandhar, Punjab, 144007, India.

出版信息

J Mol Model. 2018 Mar 16;24(4):94. doi: 10.1007/s00894-018-3631-x.

DOI:10.1007/s00894-018-3631-x
PMID:29549500
Abstract

The adsorption behavior of sulfur-based toxic gases (HS and SO) on armchair silicene nanoribbons (ASiNRs) was investigated using first-principles density functional theory (DFT). Being a zero band gap material, application of bulk silicene is limited in nanoelectronics, despite its high carrier mobility. By restricting its dimensions into one dimension, construction of nanoribbons, and by introduction of a defect, its band gap can be tuned. Pristine armchair silicene nanoribbons (P-ASiNRs) have a very low sensitivity to gas molecules. Therefore, a defect was introduced by removal of one Si atom, leading to increased sensitivity. To deeply understand the impact of the aforementioned gases on silicene nanoribbons, electronic band structures, density of states, charge transfers, adsorption energies, electron densities, current-voltage characteristics and most stable adsorption configurations were calculated. HS is dissociated completely into HS and H species when adsorbed onto defective armchair silicene nanoribbons (D-ASiNRs). Thus, D-ASiNR is a likely catalyst for dissociation of the HS gas molecule. Conversely, upon SO adsorption, P-ASiNR acts as a suitable sensor, whereas D-ASiNR provides enhanced sensitivity compared with P-ASiNR. On the basis of these results, D-ASiNR can be expected to be a disposable sensor for SO detection as well as a catalyst for HS reduction. Graphical abstract Comparison of I-V characteristics of pristine and defective armchair silicene nanoribbons with HS and SO adsorbed on them.

摘要

采用第一性原理密度泛函理论(DFT)研究了硫基有毒气体(HS和SO)在扶手椅型硅烯纳米带(ASiNRs)上的吸附行为。尽管体硅烯具有较高的载流子迁移率,但作为一种零带隙材料,其在纳米电子学中的应用受到限制。通过将其尺寸限制为一维来构建纳米带,并引入缺陷,可以调节其带隙。原始扶手椅型硅烯纳米带(P-ASiNRs)对气体分子的灵敏度非常低。因此,通过去除一个Si原子引入缺陷,从而提高了灵敏度。为了深入了解上述气体对硅烯纳米带的影响,计算了电子能带结构、态密度、电荷转移、吸附能、电子密度、电流-电压特性以及最稳定的吸附构型。当HS吸附到缺陷扶手椅型硅烯纳米带(D-ASiNRs)上时,会完全解离成HS和H物种。因此,D-ASiNR可能是HS气体分子解离的催化剂。相反,在SO吸附时,P-ASiNR可作为合适的传感器,而D-ASiNR与P-ASiNR相比具有更高的灵敏度。基于这些结果,D-ASiNR有望成为用于SO检测的一次性传感器以及用于HS还原的催化剂。图形摘要:吸附有HS和SO的原始和缺陷扶手椅型硅烯纳米带的I-V特性比较。

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