School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan.
Phys Rev Lett. 2012 Jun 15;108(24):245501. doi: 10.1103/PhysRevLett.108.245501. Epub 2012 Jun 11.
As the Si counterpart of graphene, silicene may be defined as an at least partially sp2-hybridized, atom-thick honeycomb layer of Si that possesses π-electronic bands. Here we show that two-dimensional, epitaxial silicene forms through surface segregation on zirconium diboride thin films grown on Si wafers. A particular buckling of silicene induced by the epitaxial relationship with the diboride surface leads to a direct π-electronic band gap at the Γ point. These results demonstrate that the buckling and thus the electronic properties of silicene are modified by epitaxial strain.
作为石墨烯的硅对应物，硅烯可以被定义为至少部分 sp2 杂化的、原子厚度的硅蜂窝层，具有π电子能带。在这里，我们表明二维、外延硅烯通过在硅片上生长的二硼化锆薄膜表面偏析形成。由于与二硼化物表面的外延关系，硅烯的特殊弯曲导致了 Γ 点处直接的π电子带隙。这些结果表明，弯曲，从而硅烯的电子性质被外延应变所修饰。
