非晶碳氧化硅中注入氦的快速无损除气

Rapid and damage-free outgassing of implanted helium from amorphous silicon oxycarbide.

作者信息

Su Qing, Ding Hepeng, Price Lloyd, Shao Lin, Hinks Jonathan A, Greaves Graeme, Donnelly Stephen E, Demkowicz Michael J, Nastasi Michael

机构信息

Nebraska Center for Energy Sciences Research, University of Nebraska-Lincoln, Lincoln, NE, 68583-0857, USA.

Department of Materials Science and Engineering, Texas A&M University, College Station, TX, 77843-3128, USA.

出版信息

Sci Rep. 2018 Mar 22;8(1):5009. doi: 10.1038/s41598-018-23426-y.

DOI:10.1038/s41598-018-23426-y

PMID:29568069

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5864747/

Abstract

Damage caused by implanted helium (He) is a major concern for material performance in future nuclear reactors. We use a combination of experiments and modeling to demonstrate that amorphous silicon oxycarbide (SiOC) is immune to He-induced damage. By contrast with other solids, where implanted He becomes immobilized in nanometer-scale precipitates, He in SiOC remains in solution and outgasses from the material via atomic-scale diffusion without damaging its free surfaces. Furthermore, the behavior of He in SiOC is not sensitive to the exact concentration of carbon and hydrogen in this material, indicating that the composition of SiOC may be tuned to optimize other properties without compromising resistance to implanted He.

摘要

植入氦气（He）造成的损伤是未来核反应堆材料性能的一个主要问题。我们通过实验和建模相结合的方法证明，非晶态碳氧化硅（SiOC）对氦诱导的损伤具有免疫性。与其他固体不同，在其他固体中植入的氦会固定在纳米级沉淀物中，而SiOC中的氦仍处于溶解状态，并通过原子尺度扩散从材料中逸出，而不会损坏其自由表面。此外，SiOC中氦的行为对该材料中碳和氢的确切浓度不敏感，这表明可以调整SiOC的成分以优化其他性能，而不会损害其对植入氦的抗性。