Hoang Khang, Oh Myungkeun, Choi Yongki
Department of Physics, North Dakota State University, Fargo, North Dakota 58108, USA. Email:
Materials and Nanotechnology Program, North Dakota State University, Fargo, North Dakota 58105, USA.
RSC Adv. 2018 Jan 23;8(8):4191-4196. doi: 10.1039/c7ra13436c.
Transition-metal tungstates MWO (M = Co, Ni, Cu, Zn) have applications in many areas, including supercapacitors. A good understanding of the electronic structure is essential to understanding their functional properties. Here, we report a first-principles study of the materials using hybrid density-functional calculations. The electronic structure is analyzed with a focus on the nature of the electronic states near the band edges. We find that hole polarons can form at the Co lattice site in CoWO and the O site in NiWO, CuWO, and ZnWO, resulting in the formation of Co in the former and O in the latter. The electrochemical activity observed in certain tungstate compounds, but not in others, appears to be related to the ability to form hole polarons on the transition-metal ions. The formation energy and migration barrier of the hole polaron in CoWO are also calculated and the results are employed to understand the reported p-type conductivity.
过渡金属钨酸盐MWO(M = Co、Ni、Cu、Zn)在包括超级电容器在内的许多领域都有应用。深入了解其电子结构对于理解它们的功能特性至关重要。在此,我们报道了使用杂化密度泛函计算对这些材料进行的第一性原理研究。分析电子结构时重点关注带边附近电子态的性质。我们发现空穴极化子可在CoWO的Co晶格位点以及NiWO、CuWO和ZnWO的O位点形成,在前一种情况中导致Co的形成,在后一种情况中导致O的形成。在某些钨酸盐化合物中观察到的电化学活性,而在其他化合物中未观察到,似乎与在过渡金属离子上形成空穴极化子的能力有关。还计算了CoWO中空穴极化子的形成能和迁移势垒,并利用这些结果来理解所报道的p型导电性。