Department of Chemical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan, ROC.
Department of Chemical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan, ROC.
J Colloid Interface Sci. 2018 Jul 1;521:216-225. doi: 10.1016/j.jcis.2018.03.024. Epub 2018 Mar 8.
TiO nanocrystals decorated core-shell CdS-CdO nanorod arrays, TiO@CdO/CdS NR, were fabricated as high efficiency anodes for photoelctrochemical hydrogen generation. The novel sandwich heterostructure was constructed from first growth of CdS nanorod arrays on a fluorine doped tin oxide (FTO) substrate with a hydrothermal process, followed by in situ generation of CdO thin films of single digit nanometers from the CdS nanorod surfaces through thermal oxidation, and final decoration of TiO nanocrystals of 10-20 nm via a successive ionic layer absorption and reaction process. The core-shell CdS-CdO heterostructure possesses a Z-scheme band structure to enhance interfacial charge transfer, facilitating effective charge separation to suppress electron-hole recombination within CdS for much improved current density generation. The final decoration of TiO nanocrystals passivates surface defects and trap states of CdO, further suppressing surface charge recombination for even higher photovoltaic conversion efficiencies. The photoelectrochemical performances of the plain CdS nanorod array were significantly improved with the formation of the sandwich heterostructure, achieving a photo current density of 3.2 mA/cm at 1.23 V (vs. RHE), a 141% improvement over the plain CdS nanorod array and a 32% improvement over the CdO/CdS nanorod array.
TiO 纳米晶修饰核壳 CdS-CdO 纳米棒阵列,TiO@CdO/CdS NR,被制备为高效光电化学析氢阳极。该新型三明治异质结构是通过水热法在掺氟氧化锡(FTO)基底上首先生长 CdS 纳米棒阵列,然后通过热氧化在 CdS 纳米棒表面原位生成个位数纳米厚的 CdO 薄膜,最后通过连续离子层吸收和反应过程在表面上修饰 10-20nm 的 TiO 纳米晶。核壳结构的 CdS-CdO 异质结构具有 Z 型能带结构,可增强界面电荷转移,促进有效电荷分离,抑制 CdS 内的电子-空穴复合,从而产生更高的电流密度。TiO 纳米晶的最终修饰钝化了 CdO 的表面缺陷和陷阶态,进一步抑制了表面电荷复合,从而实现了更高的光伏转换效率。形成三明治异质结构后,普通 CdS 纳米棒阵列的光电化学性能得到显著提高,在 1.23V(相对于 RHE)时达到 3.2mA/cm 的光电流密度,比普通 CdS 纳米棒阵列提高了 141%,比 CdO/CdS 纳米棒阵列提高了 32%。