School of Material Science and Engineering , Beijing Institute of Technology , Beijing 100081 , P. R. China.
School of Science , Minzu University of China , Beijing 100081 , P. R. China.
ACS Appl Mater Interfaces. 2018 Apr 11;10(14):11652-11662. doi: 10.1021/acsami.7b19530. Epub 2018 Mar 28.
Heterogeneous p-n junction CdS/CuO nanorod arrays have been fabricated by using a facile successive ionic-layer adsorption and reaction process to grow CuO nanoparticles on the surface of ordered CdS nanorod arrays. The heterogeneous p-n junction nanorod arrays exhibit superior photoelectrochemical performance for hydrogen (H) generation and high stability under visible-light irradiation. The highest photocurrent density achieved by heterogeneous nanorod array photoelectrode is 4.2 mA cm in a sacrificial NaS and NaSO mixture electrolyte solution at 0 V versus Ag/AgCl, which is 4 times higher than that of a pure CdS nanorod array photoelectrode. In addition, the heterogeneous nanorod array photoelectrode achieves an incident photon conversion efficiency value of 40.5% at 470 nm. The photocatalytic hydrogen generation rate of the heterogeneous nanorod array photoelectrode reaches up to 161.2 μmol h, around 3-fold increase compared to that of a bare CdS photoelectrode. Furthermore, the heterogeneous p-n junction CdS/CuO nanorod arrays show an excellent stability under long light illumination of 7200 s. The improved photoelectrochemical performance, photocatalytic activity, and excellent stability of the heterogeneous nanorod array photoelectrode resulted from the efficient separation of photoinduced electron-hole pairs, which is achieved by the synergistic effects of CdS, CuO, p-n junction, and an inner electric field in the photoelectrode. The present work provides a new strategy to fabricate a heterogeneous photoelectrode. This facile strategy is expected to be utilized to fabricate electrodes of other materials for highly efficient solar-driven water splitting application.
通过使用简便的连续离子层吸附和反应工艺，在有序 CdS 纳米棒阵列表面生长 CuO 纳米颗粒，制备出了异质 p-n 结 CdS/CuO 纳米棒阵列。该异质 p-n 结纳米棒阵列在可见光照射下具有优异的光电化学性能，用于氢气 (H) 生成和高稳定性。在牺牲的 NaS 和 NaSO 混合物电解质溶液中，异质纳米棒阵列光电电极在 0 V 相对于 Ag/AgCl 时达到的最高光电流密度为 4.2 mA cm，是纯 CdS 纳米棒阵列光电电极的 4 倍。此外，异质纳米棒阵列光电电极在 470nm 处的入射光子转换效率值达到 40.5%。异质纳米棒阵列光电电极的光催化析氢速率高达 161.2 μmol h，与裸 CdS 光电电极相比增加了约 3 倍。此外，异质 p-n 结 CdS/CuO 纳米棒阵列在长达 7200s 的长时间光照下表现出优异的稳定性。异质纳米棒阵列光电电极的光电化学性能、光催化活性和优异的稳定性得到了提高，这是由于光生电子-空穴对的有效分离，这是通过 CdS、CuO、p-n 结和光电电极中的内电场的协同作用实现的。本工作为制备异质光电电极提供了一种新策略。这种简便的策略有望用于制备其他材料的电极，以实现高效的太阳能驱动水分解应用。
