Zhou Yu, Qi Haoran, Wang Yueke, Qi Dong-Xiang, Hu Qing
Opt Lett. 2018 Apr 1;43(7):1459-1462. doi: 10.1364/OL.43.001459.
Hexagonal boron nitride (h-BN) thin films support volume-confined phonon polariton modes within the bulk material as well as surface-confined modes at the edges of thin films. In this Letter, we theoretically investigate the phonon polaritons in curved h-BN thin films. One-dimensional guided phonon polariton modes are found, which are caused by the curved geometry and do not exist in extended flat films. These modes are guided along a specific direction with relatively low propagation losses. So far, one-dimensional guided phonon polariton modes have only been proposed in nanowire and nanoribbon structures. Our study offers another way with the advantage of keeping the h-BN film intact, which can avoid huge scattering losses due to the structural defects. These investigations may offer an easy and robust approach toward phonon-polariton-based nanophotonic circuitry.
六方氮化硼（h-BN）薄膜在块状材料中支持体限声子极化激元模式，同时在薄膜边缘支持面限模式。在本信函中，我们从理论上研究了弯曲h-BN薄膜中的声子极化激元。发现了一维导模声子极化激元模式，其由弯曲几何结构引起，在延伸的平面薄膜中不存在。这些模式沿特定方向传播，传播损耗相对较低。到目前为止，一维导模声子极化激元模式仅在纳米线和纳米带结构中被提出。我们的研究提供了另一种方法，其优点是保持h-BN薄膜完整，可避免由于结构缺陷导致的巨大散射损耗。这些研究可能为基于声子极化激元的纳米光子电路提供一种简便且稳健的方法。
