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使用平方准平顶光束对ITO薄膜烧蚀形态进行脊部最小化处理。

Ridge Minimization of Ablated Morphologies on ITO Thin Films Using Squared Quasi-Flat Top Beam.

作者信息

Kim Hoon-Young, Jeon Jin-Woo, Choi Wonsuk, Shin Young-Gwan, Ji Suk-Young, Cho Sung-Hak

机构信息

Department of Laser & Electron Beam Application, Korea Institute of Machinery & Material (KIMM), 171 Jang-dong, Yuseong-gu, Daejeon 305-343, Korea.

Department of Nano-Mechatronics, Korea University of Science & Technology (UST), 176 Gajung-dong, Yuseong-gu, Daejeon 305-343, Korea.

出版信息

Materials (Basel). 2018 Mar 30;11(4):530. doi: 10.3390/ma11040530.

DOI:10.3390/ma11040530
PMID:29601515
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5951376/
Abstract

In this study, we explore the improvements in pattern quality that was obtained with a femtosecond laser with quasi-flat top beam profiles at the ablated edge of indium tin oxide (ITO) thin films for the patterning of optoelectronic devices. To ablate the ITO thin films, a femtosecond laser is used that has a wavelength and pulse duration of 1030 nm and 190 fs, respectively. The squared quasi-flat top beam is obtained from a circular Gaussian beam using slits with varying - axes. Then, the patterned ITO thin films are measured using both scanning electron and atomic force microscopes. In the case of the Gaussian beam, the ridge height and width are approximately 39 nm and 1.1 μm, respectively, whereas, when the quasi-flat top beam is used, the ridge height and width are approximately 7 nm and 0.25 μm, respectively.

摘要

在本研究中，我们探索了使用具有准平顶光束轮廓的飞秒激光在铟锡氧化物（ITO）薄膜的烧蚀边缘进行光电器件图案化时所获得的图案质量的改善。为了烧蚀ITO薄膜，使用了波长为1030 nm、脉冲持续时间为190 fs的飞秒激光。通过使用具有不同轴的狭缝从圆形高斯光束获得方形准平顶光束。然后，使用扫描电子显微镜和原子力显微镜对图案化的ITO薄膜进行测量。在高斯光束的情况下，脊高和宽度分别约为39 nm和1.1 μm，而当使用准平顶光束时，脊高和宽度分别约为7 nm和0.25 μm。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1a46/5951376/d6c40863a85e/materials-11-00530-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1a46/5951376/470bcfa449f2/materials-11-00530-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1a46/5951376/d1600da674e4/materials-11-00530-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1a46/5951376/ef3e716ab476/materials-11-00530-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1a46/5951376/440e532fd162/materials-11-00530-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1a46/5951376/a53e42636ae0/materials-11-00530-g005a.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1a46/5951376/204ff304bdfd/materials-11-00530-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1a46/5951376/d6c40863a85e/materials-11-00530-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1a46/5951376/470bcfa449f2/materials-11-00530-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1a46/5951376/d1600da674e4/materials-11-00530-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1a46/5951376/ef3e716ab476/materials-11-00530-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1a46/5951376/440e532fd162/materials-11-00530-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1a46/5951376/a53e42636ae0/materials-11-00530-g005a.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1a46/5951376/204ff304bdfd/materials-11-00530-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1a46/5951376/d6c40863a85e/materials-11-00530-g007.jpg

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本文引用的文献

1
Performance and stress analysis of metal oxide films for CMOS-integrated gas sensors.用于CMOS集成气体传感器的金属氧化物薄膜的性能与应力分析
Sensors (Basel). 2015 Mar 25;15(4):7206-27. doi: 10.3390/s150407206.
2
Pulsed-laser evaporation technique for deposition of thin films: Physics and theoretical model.用于薄膜沉积的脉冲激光蒸发技术：物理与理论模型。
Phys Rev B Condens Matter. 1990 May 1;41(13):8843-8859. doi: 10.1103/physrevb.41.8843.