Abdel-Khalek H, El-Samahi M I, El-Mahalawy Ahmed M
Thin Film Laboratory, Physics Department, Faculty of Science, Suez Canal University, Ismailia, Egypt.
Thin Film Laboratory, Physics Department, Faculty of Science, Suez Canal University, Ismailia, Egypt.
Spectrochim Acta A Mol Biomol Spectrosc. 2018 Jun 15;199:356-366. doi: 10.1016/j.saa.2018.04.001. Epub 2018 Apr 4.
The influence of plasma exposure on structural, morphological and optical properties of copper (II) acetylacetonate thin films deposited by thermal evaporation technique was investigated. Copper (II) acetylacetonate as-grown thin films were exposed to the atmospheric plasma for different times. The exposure of as-grown cu(acac) thin film to atmospheric plasma for 5min modified its structural, morphological and optical properties. The effect of plasma exposure on structure and roughness of cu(acac) thin films was evaluated by XRD and AFM techniques, respectively. The XRD results showed an increment in crystallinity due to exposure for 5min, but, when the exposure time reaches 10min, the film was transformed to an amorphous state. The AFM results revealed a strong modification of films roughness when the average roughness decreased from 63.35nm to ~1nm as a result of interaction with plasma. The optical properties of as-grown and plasma exposured cu(acac) thin films were studied using spectrophotometric method. The exposure of cu(acac) thin films to plasma produced the indirect energy gap decrease from 3.20eV to 2.67eV for 10min exposure time. The dispersion parameters were evaluated in terms of single oscillator model for as-grown and plasma exposured thin films. The influence of plasma exposure on third order optical susceptibility was studied.
研究了等离子体暴露对通过热蒸发技术沉积的乙酰丙酮铜(II)薄膜的结构、形态和光学性质的影响。将生长态的乙酰丙酮铜(II)薄膜暴露于大气等离子体不同时间。生长态的cu(acac)薄膜暴露于大气等离子体5分钟会改变其结构、形态和光学性质。分别通过XRD和AFM技术评估了等离子体暴露对cu(acac)薄膜结构和粗糙度的影响。XRD结果表明,暴露5分钟会使结晶度增加,但当暴露时间达到10分钟时,薄膜转变为非晶态。AFM结果显示,由于与等离子体相互作用,薄膜粗糙度发生了显著变化,平均粗糙度从63.35nm降至约1nm。使用分光光度法研究了生长态和等离子体暴露后的cu(acac)薄膜的光学性质。cu(acac)薄膜暴露于等离子体10分钟后,间接能隙从3.20eV降至2.67eV。根据单振子模型评估了生长态和等离子体暴露薄膜的色散参数。研究了等离子体暴露对三阶光学极化率的影响。