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解析在石墨上生长的硅烯和锗烯纳米片存在的争议。

Resolving the Controversial Existence of Silicene and Germanene Nanosheets Grown on Graphite.

作者信息

Peng Wenbing, Xu Tao, Diener Pascale, Biadala Louis, Berthe Maxime, Pi Xiaodong, Borensztein Yves, Curcella Alberto, Bernard Romain, Prévot Geoffroy, Grandidier Bruno

机构信息

State Key Laboratory of Silicon Materials and School of Materials Science and Engineering , Zhejiang University , Hangzhou , Zhejiang 310027 , China.

Université Lille, CNRS, Centrale Lille, ISEN, Université Valenciennes, UMR 8520-IEMN , F-59000 Lille , France.

出版信息

ACS Nano. 2018 May 22;12(5):4754-4760. doi: 10.1021/acsnano.8b01467. Epub 2018 Apr 17.

Abstract

The highly oriented pyrolytic graphite (HOPG) surface, consisting of a dangling bond-free lattice, is regarded as a potential substrate for van der Waals heteroepitaxy of two-dimensional layered materials. In this work, the growth of silicon and germanium on HOPG is investigated with scanning tunneling microscopy by using typical synthesis conditions for silicene and germanene on metal surfaces. At low coverages, the deposition of Si and Ge gives rise to tiny and sparse clusters that are surrounded by a honeycomb superstructure. From the detailed analysis of the superstructure, its comparison with the one encountered on the bare and clean HOPG surface, and simulations of the electron density, we conclude that the superstructure is caused by charge density modulations in the HOPG surface. At high coverages, we find the formation of clusters, assembled in filamentary patterns, which indicates a Volmer-Weber growth mode instead of a layer-by-layer growth mode. This coverage-dependent study sets the stage for revisiting recent results alleging the synthesis of silicene and germanene on the HOPG surface.

摘要

由无悬空键晶格组成的高度取向热解石墨(HOPG)表面被视为二维层状材料范德华异质外延的潜在衬底。在这项工作中,利用扫描隧道显微镜,采用金属表面上硅烯和锗烯的典型合成条件,研究了硅和锗在HOPG上的生长情况。在低覆盖率下,硅和锗的沉积会产生微小且稀疏的团簇,这些团簇被蜂窝状超结构包围。通过对超结构的详细分析、将其与裸露干净的HOPG表面上遇到的超结构进行比较以及电子密度模拟,我们得出结论,该超结构是由HOPG表面的电荷密度调制引起的。在高覆盖率下,我们发现形成了以丝状图案组装的团簇,这表明是伏尔默 - 韦伯生长模式而非逐层生长模式。这项与覆盖率相关的研究为重新审视近期声称在HOPG表面合成硅烯和锗烯的结果奠定了基础。

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