Svintsov A A, Krasnov A A, Polikarpov M A, Polyakov A Y, Yakimov E B
Institute of Microelectronics Technology RAS, 142432 Chernogolovka, IMT, Russia.
NUST "MISiS", Leninskiy Prosp., 4, 119049 Moscow, Russia.
Appl Radiat Isot. 2018 Jul;137:184-189. doi: 10.1016/j.apradiso.2018.04.010. Epub 2018 Apr 5.
A verification of the Monte Carlo simulation software for the prediction of short circuit current value is carried out using the Ni-63 source with the activity of 2.7 mCi/cm and converters based on Si p-i-n diodes and SiC and GaN Schottky diodes. A comparison of experimentally measured and calculated short circuit current values confirms the validity of the proposed modeling method, with the difference in the measured and calculated short circuit current values not exceeding 25% and the error in the predicted output power values being below 30%. Effects of the protective layer formed on the Ni-63 radioactive film and of the passivating film on the semiconductor converters on the energy deposited inside the converters are estimated. The maximum attainable betavoltaic cell parameters are estimated.
使用活度为2.7 mCi/cm的镍 - 63源以及基于硅p - i - n二极管、碳化硅和氮化镓肖特基二极管的转换器，对用于预测短路电流值的蒙特卡罗模拟软件进行了验证。实验测量的短路电流值与计算值的比较证实了所提出建模方法的有效性，测量值与计算值之间的短路电流差异不超过25%，预测输出功率值的误差低于30%。评估了在镍 - 63放射性薄膜上形成的保护层以及半导体转换器上的钝化膜对转换器内部沉积能量的影响。估计了可实现的最大β伏特电池参数。
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