用于基于钛酸锶的β伏打电池的砷化镓二极管。
GaAs diodes for TiT-based betavoltaic cells.
作者信息
Dorokhin M V, Vikhrova O V, Demina P B, Kalentyeva I L, Vergeles P S, Yakimov E B, Lesnikov V P, Zvonkov B N, Ved M V, Danilov Yu A, Zdoroveyshchev A V
机构信息
Research Institute for Physics and Technology, Lobachevsky State University of Nizhni Novgorod, 603950, Nizhni Novgorod, Russia.
Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Science, 6 Academician Ossipyan Str., Chernogolovka, Moscow Region, 142432, Russia.
出版信息
Appl Radiat Isot. 2022 Jan;179:110030. doi: 10.1016/j.apradiso.2021.110030. Epub 2021 Nov 16.
The GaAs semiconductor structures for the application as betavoltaic power sources were investigated. Three types of structures underwent a comparative study: a Schottky diode, a p-n junction and Schottky structure modified by deposition of a carbon layer. The power characteristics were estimated by Monte-Carlo simulation and collected current calculation using parameters obtained from the electron beam induced current technique. It was shown that carbon deposition on the top of n-GaAs allows passivating the surface states and thus improving betavoltaic performance.
研究了用作β伏特电源的砷化镓半导体结构。对三种类型的结构进行了对比研究：肖特基二极管、p-n结以及通过沉积碳层改性的肖特基结构。利用蒙特卡洛模拟并根据电子束感应电流技术获得的参数计算收集电流，从而估算功率特性。结果表明，在n型砷化镓顶部沉积碳能够钝化表面态，进而提高β伏特性能。
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