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基于噻二唑并喹喔啉的 N-杂环芳烃作为高密度数据存储器件的活性元件。

Thiadizoloquinoxaline-Based N-Heteroacenes as Active Elements for High-Density Data-Storage Device.

机构信息

College of Chemistry, Chemical Engineering and Materials Science , Soochow University , Suzhou 215123 , P. R. China.

School of Materials Science and Engineering , Nanyang Technological University , Singapore 639798 , Singapore.

出版信息

ACS Appl Mater Interfaces. 2018 May 9;10(18):15971-15979. doi: 10.1021/acsami.8b05178. Epub 2018 Apr 26.

DOI:10.1021/acsami.8b05178
PMID:29682969
Abstract

A novel thiadiazoloquinoxaline (TQ)-based donor-acceptor (D-A)-type N-heteroacene (Py-1-TQ) has been demonstrated for promising applications in organic multilevel resistive memory devices. Compared with its counterparts (Py-0-TQ and Py-2-TQ), which show flash-type binary memory behaviors, Py-1-TQ exhibits excellent nonvolatile write-once-read-many-times-type ternary memory effects with high ON2/ON1/OFF current ratios (10:10:1), which can be attributed to the different electron-withdrawing abilities between the pyrazine unit and TQ species that can induce stepwise D-A charge-transfer processes. These results suggest that TQ-based N-heteroacenes can be potentially useful in ultrahigh-density data-storage devices through the rational D-A tuning.

摘要

一种新型的噻二唑并喹喔啉(TQ)基给体-受体(D-A)型 N-杂环芳烃(Py-1-TQ)已被证明在有机多电平阻变存储器件中有很有前途的应用。与表现出闪存型二进制存储行为的同类物(Py-0-TQ 和 Py-2-TQ)相比,Py-1-TQ 表现出优异的非易失性一次写入多次读取型三进制存储效应,具有高的 ON2/ON1/OFF 电流比(10:10:1),这归因于吡嗪单元和 TQ 物种之间不同的电子受能力,可以诱导逐步的 D-A 电荷转移过程。这些结果表明,基于 TQ 的 N-杂环芳烃可以通过合理的 D-A 调谐在超高密度数据存储设备中具有潜在的用途。

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