College of Materials Science & Technology, Jiangsu Provincial Key Laboratory of Materials and Technology for Energy Conversion , Nanjing University of Aeronautics & Astronautics , 29 Yudao Street , Nanjing 210016 , P. R. China.
Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering , Changzhou University , Changzhou 213164 , P. R. China.
ACS Appl Mater Interfaces. 2018 May 23;10(20):17427-17436. doi: 10.1021/acsami.8b01588. Epub 2018 May 8.
Direct growth of graphene films on glass is of great importance but has so far met with limited success. The noncatalytic property of glass results in the low decomposition ability of hydrocarbon precursors, especially at reduced temperatures (<1000 °C), and therefore amorphous carbon (a-C) films are more likely to be obtained. Here, we report the hydrogen influence on the structural and electrical properties of carbon films deposited on quartz glass at 850 °C by hot-filament chemical vapor deposition (HFCVD). The results revealed that the obtained a-C films were all graphitelike carbon films. Structural transition of the deposited films from a-C to nanocrystalline graphene was achieved by raising the hydrogen dilution ratios from 10 to over 80%. On the basis of systematic structural and chemical characterizations, a schematic process with three steps including sp chain aggregation, aromatic ring formation, and sp bond etching was proposed to interpret the structural evolution. The nanocrystalline graphene films grown on glass by HFCVD exhibited good electrical performance with a carrier mobility of 36.76 cm/(V s) and a resistivity of 5.24 × 10 Ω cm over an area of 1 cm. Temperature-dependent electrical characterizations revealed that the electronic transport in carbon films was dominated by defect, localized, and extended states, respectively, when increasing the temperature from 75 to 292 K. The nanocrystalline graphene films presented higher carrier mobility and lower carrier concentration than those of a-C films, which was mainly attributed to their smaller conductive activation energy. The present investigation provides an effective way for direct growth of graphene films on glass at reduced temperatures and also offers useful insights into the understanding of structural and electrical relationship between a-C and graphene.
直接在玻璃上生长石墨烯薄膜非常重要,但迄今为止,其成功率有限。玻璃的非催化性质导致碳氢前驱体的分解能力较低,特别是在较低温度(<1000°C)下,因此更容易得到非晶态碳(a-C)薄膜。在这里,我们报告了在 850°C 下通过热灯丝化学气相沉积(HFCVD)在石英玻璃上沉积碳膜时,氢对其结构和电学性质的影响。结果表明,所得到的 a-C 薄膜均为类石墨碳薄膜。通过将氢稀释比从 10 提高到 80%以上,沉积膜的结构从 a-C 转变为纳米晶石墨烯。基于系统的结构和化学特性,提出了一个三步过程示意图,包括 sp 链聚集、芳构化和 sp 键刻蚀,以解释结构演变。通过 HFCVD 在玻璃上生长的纳米晶石墨烯薄膜表现出良好的电学性能,其载流子迁移率为 36.76 cm/(V s),电阻率为 5.24×10 Ω cm,面积为 1 cm。温度相关的电特性研究表明,当温度从 75 K 升高到 292 K 时,碳膜中的电子输运分别由缺陷、局域化和扩展态主导。与 a-C 薄膜相比,纳米晶石墨烯薄膜具有更高的载流子迁移率和更低的载流子浓度,这主要归因于其较小的导电激活能。本研究为在较低温度下直接在玻璃上生长石墨烯薄膜提供了一种有效方法,也为理解 a-C 和石墨烯之间的结构和电学关系提供了有用的见解。