Wen Boyu, Xu Chao, Wang Siyi, Wang Kaixi, Tam Man Chun, Wasilewski Zbig, Ban Dayan
Opt Express. 2018 Apr 2;26(7):9194-9204. doi: 10.1364/OE.26.009194.
A dual lasing channel Terahertz Quantum Cascade laser (THz QCL) based on GaAs/AlGaAs material system is demonstrated. The device shows the lowest reported threshold current density (550A/cm at 50K) of GaAs/AlGaAs material system based scattering-assisted (SA) structures and operates up to a maximum lasing temperature of 144K. Dual lasing channel operation is investigated theoretically and experimentally. The combination of low frequency emission, dual lasing channel operation, low lasing threshold current density and high temperature performance make such devices ideal candidates for low frequency applications, and initiates the design strategy for achieving high-temperature performance terahertz quantum cascade laser with wide frequency coverage at low frequency.
展示了一种基于GaAs/AlGaAs材料体系的双激射通道太赫兹量子级联激光器(THz QCL)。该器件展现出基于GaAs/AlGaAs材料体系的散射辅助(SA)结构所报道的最低阈值电流密度(50K时为550A/cm²),并且能在高达144K的最高激射温度下工作。从理论和实验两方面对双激射通道运行进行了研究。低频发射、双激射通道运行、低激射阈值电流密度以及高温性能的结合,使得此类器件成为低频应用的理想候选者,并开启了在低频下实现具有宽频率覆盖的高温性能太赫兹量子级联激光器的设计策略。