Khanal Sudeep, Reno John L, Kumar Sushil
Opt Express. 2015 Jul 27;23(15):19689-97. doi: 10.1364/OE.23.019689.
A 2.1 THz quantum cascade laser (QCL) based on a scattering-assisted injection and resonant-phonon depopulation design scheme is demonstrated. The QCL is based on a four-well period implemented in the GaAs/Al0.15Ga0.85As material system. The QCL operates up to a heat-sink temperature of 144 K in pulsed-mode, which is considerably higher than that achieved for previously reported THz QCLs operating around the frequency of 2 THz. At 46 K, the threshold current-density was measured as ∼ 745 A/cm2 with a peak-power output of ∼10 mW. Electrically stable operation in a positive differential-resistance regime is achieved by a careful choice of design parameters. The results validate the robustness of scattering-assisted injection schemes for development of low-frequency (ν < 2.5 THz) QCLs.
展示了一种基于散射辅助注入和谐振声子去填充设计方案的2.1太赫兹量子级联激光器(QCL)。该QCL基于在GaAs/Al0.15Ga0.85As材料系统中实现的四阱周期。该QCL在脉冲模式下可在高达144 K的热沉温度下工作,这比之前报道的在2太赫兹频率附近工作的太赫兹QCL所达到的温度要高得多。在46 K时,测得阈值电流密度约为745 A/cm2,峰值功率输出约为10 mW。通过精心选择设计参数,在正微分电阻区域实现了电稳定运行。这些结果验证了散射辅助注入方案对于开发低频(ν < 2.5太赫兹)QCL的稳健性。