Opt Lett. 2018 Jun 1;43(11):2531-2534. doi: 10.1364/OL.43.002531.
A polarization-insensitive 2×2 thermo-optic Mach-Zehnder switch (MZS) on silicon is proposed and demonstrated experimentally by utilizing silicon-on-insulator (SOI) nanophotonic waveguides with a 340-nm-thick silicon core layer. The present MZS consists of two 2×2 3 dB multimode interference (MMI) couplers, which are designed to be polarization-insensitive by choosing the core width optimally. Meanwhile, the MZS arms are designed with square SOI nanophotonic waveguides with a cross section of 340 nm×340 nm in order to achieve polarization-insensitive phase shift. The fabricated silicon MZS has an excess loss of 1∼4 dB and an extinction ratio of >20 dB in the C-band (1530∼1565 nm) for both TM and TE polarizations.
提出并实验验证了一种基于绝缘体上硅(SOI)纳米光子波导的偏振不敏感 2×2 热光马赫-曾德尔开关(MZS),该波导具有 340nm 厚的硅芯层。该 MZS 由两个 2×2 的 3dB 多模干涉(MMI)耦合器组成,通过优化选择芯宽使其具有偏振不敏感性。同时,MZS 臂采用正方形 SOI 纳米光子波导设计,横截面为 340nm×340nm,以实现偏振不敏感的相移。所制备的硅基 MZS 在 C 波段(1530nm~1565nm)内,对于 TM 和 TE 两种偏振态,其附加损耗均小于 1dB~4dB,消光比大于 20dB。