Li Weijia, Xu Luhua, Wei Zixian, Zhang Jinsong, Mao Deng, D'Mello Yannick, Plant David V
Opt Lett. 2023 Sep 1;48(17):4661-4664. doi: 10.1364/OL.497510.
We present a 2 × 2 polarization-insensitive switch on a 220-nm silicon-on-insulator platform, employing a balanced Mach-Zehnder interferometer (MZI) structure. This design incorporates polarization-insensitive adiabatic couplers, polarization rotators based on mode hybridization and evolution, and thermo-optic mode-insensitive phase shifters with wide waveguides. The switch exhibits broadband polarization-insensitive characteristics, with extinction ratios larger than 15 dB, insertion losses less than 2.3 dB, and polarization-dependent losses less than 1 dB for wavelengths ranging from 1500 nm to 1600 nm. The power consumption required for simultaneously switching the fundamental transverse electric (TE) and transverse magnetic (TM) polarized modes is 29.1 mW. These results highlight the potential of the switch as a building block for on-chip polarization-division-multiplexed optical interconnects.
我们展示了一种基于220纳米绝缘体上硅平台的2×2偏振不敏感开关,采用了平衡马赫-曾德尔干涉仪(MZI)结构。该设计包含偏振不敏感绝热耦合器、基于模式杂交和演化的偏振旋转器以及具有宽波导的热光模式不敏感移相器。该开关呈现出宽带偏振不敏感特性,对于1500纳米至1600纳米波长范围,消光比大于15分贝,插入损耗小于2.3分贝,偏振相关损耗小于1分贝。同时切换基本横向电(TE)和横向磁(TM)偏振模式所需的功耗为29.1毫瓦。这些结果凸显了该开关作为片上偏振分复用光互连构建模块的潜力。