Center for Crystal Research and Development, Key Lab Functional Crystals and Laser Technology of Chinese Academy of Sciences, Technical Institute of Physics and Chemistry , Chinese Academy of Sciences , Beijing 100190 , People's Republic of China.
University of Chinese Academy of Sciences , Beijing 100190 , People's Republic of China.
Inorg Chem. 2018 Jun 18;57(12):6795-6798. doi: 10.1021/acs.inorgchem.8b01150. Epub 2018 Jun 6.
A Hg-based ternary infrared nonlinear optical (NLO) material, HgGeSe, with the defect diamond-like (DL) structure was systematically investigated for the first time. The experimental results show that HgGeSe exhibits an enhanced second harmonic generation (SHG) response about 2.1 times that of the normal DL selenide AgGaSe ( d = 33 pm/V) at the particle size of 150-200 μm, as well as good phase-matchable ability. Moreover, theoretical analysis reveals that the nonbonding electrons around Se atoms in the defect DL structure make a dominant contribution to the improvement of the NLO property: d = 78.83 pm/V and Δ n = 0.11. This study highlights the promise of electronic engineering strategies and opens new avenues toward the design of new infrared NLO crystals with high performance.
一种基于汞的三元红外非线性光学（NLO）材料 HgGeSe，具有缺陷类金刚石（DL）结构，这是首次被系统地研究。实验结果表明，HgGeSe 在粒径为 150-200μm 时，具有约 2.1 倍于正常 DL 硒化物 AgGaSe（d=33pm/V）的增强二次谐波产生（SHG）响应，以及良好的相位匹配能力。此外，理论分析表明，缺陷 DL 结构中硒原子周围的非键电子对改善 NLO 性能有很大贡献：d=78.83pm/V，Δn=0.11。本研究强调了电子工程策略的前景，并为设计具有高性能的新型红外 NLO 晶体开辟了新途径。
