基于1550纳米光电导发射器的太赫兹高功率产生。
High power generation of THz from 1550-nm photoconductive emitters.
作者信息
Mingardi A, Zhang W-D, Brown E R, Feldman A D, Harvey T E, Mirin R P
出版信息
Opt Express. 2018 May 28;26(11):14472-14478. doi: 10.1364/OE.26.014472.
Abstract
Two photoconductive emitters - one with a self-complementary square spiral antenna, and the other with a resonant slot antenna - were fabricated on a GaAs epilayer embedded with ErAs quantum dots. Driven with 1550 nm mode-locked lasers, ~117 μW broadband THz power was generated from the device with the spiral antenna, and ~1.2 μW from the device with resonant slot antenna. The optical-to-THz conversion is through extrinsic photoconductivity.
摘要
在嵌入了ErAs量子点的砷化镓外延层上制备了两个光电导发射器，一个带有自互补方形螺旋天线，另一个带有谐振缝隙天线。用1550纳米锁模激光器驱动时，带有螺旋天线的器件产生了约117微瓦的宽带太赫兹功率，而带有谐振缝隙天线的器件产生了约1.2微瓦的功率。光到太赫兹的转换是通过非本征光电导实现的。
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