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掺杂 InO 的稀磁半导体中本征或界面聚类诱导的铁磁性。

Intrinsic or Interface Clustering-Induced Ferromagnetism in Fe-Doped InO-Diluted Magnetic Semiconductors.

机构信息

School of Materials Science and Engineering , UNSW , Kensington , NSW 2052 , Australia.

Department of Materials Science and Engineering , National University of Singapore , Singapore 119260.

出版信息

ACS Appl Mater Interfaces. 2018 Jul 5;10(26):22372-22380. doi: 10.1021/acsami.8b04046. Epub 2018 Jun 25.

DOI:10.1021/acsami.8b04046
PMID:29893112
Abstract

Five percent Fe-doped InO films were deposited using a pulsed laser deposition system. X-ray diffraction and transmission electron microscopy analysis show that the films deposited under oxygen partial pressures of 10 and 10 Torr are uniform without clusters or secondary phases. However, the film deposited under 10 Torr has a Fe-rich phase at the interface. Magnetic measurements demonstrate that the magnetization of the films increases with decreasing oxygen partial pressure. Muon spin relaxation (μSR) analysis indicates that the volume fractions of the ferromagnetic phases in PO = 10, 10, and 10 Torr-deposited samples are 23, 49, and 68%, respectively, suggesting that clusters or secondary phases may not be the origin of the ferromagnetism and that the ferromagnetism is not carrier-mediated. We propose that the formation of magnetic bound polarons is the origin of the ferromagnetism. In addition, both μSR and polarized neutron scattering demonstrate that the Fe-rich phase at the interface has a lower magnetization compared to the uniformly distributed phases.

摘要

采用脉冲激光沉积系统制备了 5%Fe 掺杂的 InO 薄膜。X 射线衍射和透射电子显微镜分析表明,在氧分压为 10 和 10 托的条件下沉积的薄膜没有团聚或第二相,是均匀的。然而,在 10 托下沉积的薄膜在界面处存在富铁相。磁测量表明,薄膜的磁化强度随氧分压的降低而增加。μ 子自旋弛豫(μSR)分析表明,在 PO = 10、10 和 10 托沉积的样品中,铁磁相的体积分数分别为 23%、49%和 68%,这表明,团簇或第二相可能不是铁磁性的起源,铁磁性也不是载流子介导的。我们提出形成磁性束缚极化子是铁磁性的起源。此外,μSR 和极化中子散射都表明,与均匀分布的相相比,界面处的富铁相具有较低的磁化强度。

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