Zhang Xueying, Vernier Nicolas, Cao Zhiqiang, Leng Qunwen, Cao Anni, Ravelosona Dafiné, Zhao Weisheng
Beihang-Goertek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University, 266101 Qingdao, People's Republic of China. Fert Beijing Institute, BDBC, School of Electronic and Information Engineering, Beihang University, 100191 Beijing, People's Republic of China. Centre for Nanoscience and Nanotechnology, University Paris-Saclay, 91405 Orsay, France.
Nanotechnology. 2018 Sep 7;29(36):365502. doi: 10.1088/1361-6528/aacd90. Epub 2018 Jun 19.
Magnetic sensors based on magnetoresistance effects have promising application prospects due to their excellent sensitivity and their advantages in terms of integration. However, the competition between higher sensitivity and a larger measuring range remains a problem. Here, we propose a novel mechanism for designing magnetoresistive sensors: probing the perpendicular field by detecting the expansion of the elastic magnetic domain wall in the free layer of a spin valve or a magnetic tunnel junction. The performances of devices based on this mechanism, such as the sensitivity and the measuring range, can be tuned by manipulating the geometry of the device. This can be achieved without changing the intrinsic properties of the material, thus promising a higher integration level and a better performance. The mechanism is theoretically explained based on the experimental results. Two examples are proposed and their functionality and performances are verified via a micromagnetic simulation.
基于磁阻效应的磁传感器因其优异的灵敏度及其在集成方面的优势而具有广阔的应用前景。然而，更高灵敏度和更大测量范围之间的竞争仍然是一个问题。在此，我们提出了一种设计磁阻传感器的新机制：通过检测自旋阀或磁性隧道结自由层中弹性磁畴壁的扩展来探测垂直场。基于该机制的器件性能，如灵敏度和测量范围，可以通过操纵器件的几何形状来调整。这可以在不改变材料固有特性的情况下实现，从而有望实现更高的集成度和更好的性能。基于实验结果对该机制进行了理论解释。提出了两个示例，并通过微磁模拟验证了它们的功能和性能。
