Department of Physics, Wellesley College, Wellesley, Massachusetts 02481, USA.
Department of Physics, Brandeis University, Waltham, Massachusetts 02453, USA.
J Chem Phys. 2018 Jun 28;148(24):244302. doi: 10.1063/1.5029929.
Photoabsorption cross sections and oscillator strengths for the strong, predissociating vibrational bands, v ≥ 11, in the S BΣu-3-XΣg-3(v,0) system are reported. Absorption measurements were undertaken on S vapor produced by a radio-frequency discharge through HS seeded in helium, and also in a two-temperature sulfur furnace, at temperatures of 370 K and 823 K, respectively. S column densities were determined in each source by combining experimental line strengths in low-v non-predissociating B - X bands (v < 7) with calculated line f-values based on measured radiative lifetimes and calculated branching ratios. The broad-band capabilities of two vacuum-ultraviolet Fourier-transform spectrometers, used with instrumental resolutions of 0.22 cm and 0.12 cm, respectively, allowed for simultaneous recordings of both non-predissociating and predissociating bands, thus placing the predissociating-band cross sections on a common absolute scale. Uncertainties in the final cross section datasets are estimated to be 15% for the 370-K vapor and 10% for the 823-K vapor. The experimental cross sections are used to inform a detailed predissociation model of the B(v) levels in Paper II [Lewis et al., J. Chem. Phys. 148, 244303 (2018)]. For astrophysical and other applications, this model can be adjusted simply to provide isotopologue-specific cross sections for a range of relevant temperatures.
本文报道了 S 原子 B Σ u-3-X Σ g-3(v,0)体系中强预解离振动带 v≥11 的光吸收截面和振子强度。通过射频放电将 HS 种子注入氦气中产生 S 蒸汽,并在 370 K 和 823 K 的两个温度的硫炉中进行吸收测量。在每个源中,通过将低 v 非预解离 B - X 带(v < 7)中的实验谱线强度与基于测量的辐射寿命和计算的分支比计算得出的线 f 值相结合,确定了 S 柱密度。两个真空紫外傅里叶变换光谱仪的宽带能力,分别具有 0.22 cm 和 0.12 cm 的仪器分辨率,允许同时记录非预解离和预解离带,从而将预解离带的截面置于共同的绝对尺度上。最终截面数据集的不确定度估计为 370-K 蒸汽的 15%,823-K 蒸汽的 10%。实验截面用于为论文 II [Lewis 等人,J. Chem. Phys. 148, 244303(2018)]中 B(v)能级的详细预解离模型提供信息。对于天体物理和其他应用,该模型可以简单地调整,以提供一系列相关温度下的同位素特异性截面。