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采用硬 X 射线光电子能谱和软 X 射线吸收谱研究掺铈和未掺铈 Nd_2CuO_4 超导薄膜的电子结构。

Electronic Structure of Ce-Doped and -Undoped Nd_{2}CuO_{4} Superconducting Thin Films Studied by Hard X-Ray Photoemission and Soft X-Ray Absorption Spectroscopy.

机构信息

Department of Physics, University of Tokyo, Bunkyo-ku, Tokyo 113-0033, Japan.

NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan.

出版信息

Phys Rev Lett. 2018 Jun 22;120(25):257001. doi: 10.1103/PhysRevLett.120.257001.

Abstract

In order to realize superconductivity in cuprates with the T^{'}-type structure, not only chemical substitution (Ce doping) but also postgrowth reduction annealing is necessary. In the case of thin films, however, well-designed reduction annealing alone without Ce doping can induce superconductivity in the T^{'}-type cuprates. In order to unveil the origin of superconductivity in the Ce-undoped T^{'}-type cuprates, we have performed bulk-sensitive hard x-ray photoemission and soft x-ray absorption spectroscopy on superconducting and nonsuperconducting Nd_{2-x}Ce_{x}CuO_{4} (x=0, 0.15, and 0.19) thin films. By postgrowth annealing, core-level spectra exhibited dramatic changes, which we attributed to the enhancement of core-hole screening in the CuO_{2} plane and the shift of chemical potential along with changes in the band filling. The result suggests that the superconducting Nd_{2}CuO_{4} film is doped with electrons despite the absence of the Ce substitution.

摘要

为了在 T^{'}型结构的铜酸盐中实现超导性,不仅需要化学取代(Ce 掺杂),还需要后生长还原退火。然而,对于薄膜来说,经过精心设计的还原退火,即使没有 Ce 掺杂,也可以在 T^{'}型铜酸盐中诱导出超导性。为了揭示 Ce 未掺杂 T^{'}型铜酸盐超导性的起源,我们对超导和非超导 Nd_{2-x}Ce_{x}CuO_{4}(x=0、0.15 和 0.19)薄膜进行了体敏感硬 x 射线光电子能谱和软 x 射线吸收光谱研究。通过后生长退火,核心层谱表现出剧烈的变化,我们将其归因于 CuO_{2}平面中芯孔屏蔽的增强以及化学势随能带填充的变化而沿其移动。结果表明,尽管没有 Ce 取代,超导 Nd_{2}CuO_{4}薄膜仍掺杂有电子。

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