Applied Quantum Composites Research Center , KIST Jeonbuk Institute of Advanced Composite Materials , 92 Chudong-ro , Bongdong-eup, Wanju-gun , Jeollabuk-do 55324 , Republic of Korea.
ACS Appl Mater Interfaces. 2018 Aug 1;10(30):25673-25682. doi: 10.1021/acsami.8b04550. Epub 2018 Jul 19.
Amorphous KNbO (KN) films were grown on a TiN/SiO/Si substrate to synthesize a KN memristor as a potential artificial synapse. The Pt/KN/TiN memristor exhibited typical and reliable bipolar switching behavior with multiple resistance levels. It also showed the transmission properties of a biological synapse, with a good conductance modulation linearity. Moreover, the KN memristor can emulate various biological synaptic plasticity characteristics including short-term plasticity, long-term plasticity, spike-rate dependent plasticity, paired-pulse facilitation, and post-tetanic potentiation by controlling the number and rate of the potentiation spike. Spike-timing-dependent plasticity (STDP), which is an essential property of biological synapses, is also realized in the KN memristor. The synaptic plasticity of the KN memristor can be explained by oxygen vacancy movement and oxygen vacancy filaments. The metaplasticity of biological synapses was also implemented in the KN memristor, including the metaplasticity of long-term potentiation and depression, and of STDP. Therefore, the KN memristor could be used as an artificial synapse in neuromorphic computing systems.
非晶态 KNbO（KN）薄膜被生长在 TiN/SiO/Si 基底上，以合成 KN 忆阻器作为潜在的人工突触。Pt/KN/TiN 忆阻器表现出典型且可靠的双极性开关行为，具有多个电阻水平。它还表现出生物突触的传输特性，具有良好的电导调制线性度。此外，通过控制增强脉冲的数量和速率，KN 忆阻器可以模拟各种生物突触可塑性特征，包括短期可塑性、长期可塑性、尖峰率依赖性可塑性、成对脉冲易化和强直后增强。尖峰时间依赖可塑性（STDP）是生物突触的基本特性，也在 KN 忆阻器中实现。KN 忆阻器的突触可塑性可以用氧空位的运动和氧空位丝来解释。生物突触的超可塑性也在 KN 忆阻器中实现，包括长时程增强和长时程压抑以及 STDP 的超可塑性。因此，KN 忆阻器可以用作神经形态计算系统中的人工突触。
