• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

基于石墨烯的神经形态忆阻器中实现的可编程突触形变更迭和亚飞焦耳级尖峰能量。

Programmable Synaptic Metaplasticity and below Femtojoule Spiking Energy Realized in Graphene-Based Neuromorphic Memristor.

机构信息

State Key Laboratory of Electronic Thin Films and Integrate Devices , University of Electronic Science and Technology of China , Chengdu 610054 , China.

Department of Electrical and Computer Engineering , University of California , Riverside , California 92521 , United States.

出版信息

ACS Appl Mater Interfaces. 2018 Jun 20;10(24):20237-20243. doi: 10.1021/acsami.8b04685. Epub 2018 Jun 11.

DOI:10.1021/acsami.8b04685
PMID:29873237
Abstract

Memristors with rich interior dynamics of ion migration are promising for mimicking various biological synaptic functions in neuromorphic hardware systems. A graphene-based memristor shows an extremely low energy consumption of less than a femtojoule per spike, by taking advantage of weak surface van der Waals interaction of graphene. The device also shows an intriguing programmable metaplasticity property in which the synaptic plasticity depends on the history of the stimuli and yet allows rapid reconfiguration via an immediate stimulus. This graphene-based memristor could be a promising building block toward designing highly versatile and extremely energy efficient neuromorphic computing systems.

摘要

基于石墨烯的忆阻器利用了石墨烯微弱的表面范德华相互作用,具有极低的能量消耗,每尖峰小于飞焦耳。该器件还表现出一种有趣的可编程类电磁性,其中突触的可塑性取决于刺激的历史,但通过即时刺激可以快速重新配置。这种基于石墨烯的忆阻器有望成为设计高度通用且极其节能的神经形态计算系统的理想构建模块。

相似文献

1
Programmable Synaptic Metaplasticity and below Femtojoule Spiking Energy Realized in Graphene-Based Neuromorphic Memristor.基于石墨烯的神经形态忆阻器中实现的可编程突触形变更迭和亚飞焦耳级尖峰能量。
ACS Appl Mater Interfaces. 2018 Jun 20;10(24):20237-20243. doi: 10.1021/acsami.8b04685. Epub 2018 Jun 11.
2
Synaptic Plasticity and Metaplasticity of Biological Synapse Realized in a KNbO Memristor for Application to Artificial Synapse.在用于人工突触的 KNbO 忆阻器中实现生物突触的突触可塑性和代谢可塑性。
ACS Appl Mater Interfaces. 2018 Aug 1;10(30):25673-25682. doi: 10.1021/acsami.8b04550. Epub 2018 Jul 19.
3
Pulse Shape and Timing Dependence on the Spike-Timing Dependent Plasticity Response of Ion-Conducting Memristors as Synapses.脉冲形状和定时对作为突触的离子传导忆阻器的脉冲定时依赖可塑性响应的依赖性
Front Bioeng Biotechnol. 2016 Dec 26;4:97. doi: 10.3389/fbioe.2016.00097. eCollection 2016.
4
Bipolar Analog Memristors as Artificial Synapses for Neuromorphic Computing.作为用于神经形态计算的人工突触的双极模拟忆阻器
Materials (Basel). 2018 Oct 26;11(11):2102. doi: 10.3390/ma11112102.
5
Emerging Memristive Artificial Synapses and Neurons for Energy-Efficient Neuromorphic Computing.新兴忆阻人工突触和神经元用于高能效神经形态计算。
Adv Mater. 2020 Dec;32(51):e2004659. doi: 10.1002/adma.202004659. Epub 2020 Oct 1.
6
Full imitation of synaptic metaplasticity based on memristor devices.基于忆阻器器件的全模仿突触型变异性。
Nanoscale. 2018 Mar 29;10(13):5875-5881. doi: 10.1039/c8nr00222c.
7
Self-Doping Memristors with Equivalently Synaptic Ion Dynamics for Neuromorphic Computing.用于神经形态计算的具有等效突触离子动力学的自掺杂忆阻器。
ACS Appl Mater Interfaces. 2019 Jul 10;11(27):24230-24240. doi: 10.1021/acsami.9b04901. Epub 2019 Jun 6.
8
Artificial synapse based on 1,4-diphenylbutadiyne with femtojoule energy consumption.基于 1,4-二苯基丁二炔的人工突触,能量消耗为飞焦。
Phys Chem Chem Phys. 2023 Feb 15;25(7):5453-5458. doi: 10.1039/d2cp05417e.
9
Graphene oxide based synaptic memristor device for neuromorphic computing.基于氧化石墨烯的突触忆阻器器件用于神经形态计算。
Nanotechnology. 2021 Apr 9;32(15):155701. doi: 10.1088/1361-6528/abd978.
10
Emulation of synaptic metaplasticity in memristors.在忆阻器中模拟突触的类重塑性。
Nanoscale. 2017 Jan 7;9(1):45-51. doi: 10.1039/c6nr08024c. Epub 2016 Dec 1.

引用本文的文献

1
Aqueous chemimemristor based on proton-permeable graphene membranes.基于质子渗透石墨烯膜的水性化学忆阻器。
Proc Natl Acad Sci U S A. 2024 Feb 6;121(6):e2314347121. doi: 10.1073/pnas.2314347121. Epub 2024 Feb 1.
2
Graphene-based RRAM devices for neural computing.用于神经计算的基于石墨烯的电阻式随机存取存储器(RRAM)器件。
Front Neurosci. 2023 Oct 5;17:1253075. doi: 10.3389/fnins.2023.1253075. eCollection 2023.
3
Chemical Influence of Carbon Interface Layers in Metal/Oxide Resistive Switches.碳界面层在金属/氧化物电阻开关中的化学影响。
ACS Appl Mater Interfaces. 2023 Apr 12;15(14):18528-18536. doi: 10.1021/acsami.3c00920. Epub 2023 Mar 29.
4
Recent progress in three-terminal artificial synapses based on 2D materials: from mechanisms to applications.基于二维材料的三端人工突触的最新进展:从机制到应用
Microsyst Nanoeng. 2023 Feb 17;9:16. doi: 10.1038/s41378-023-00487-2. eCollection 2023.
5
Palimpsest memories stored in memristive synapses.存储在忆阻突触中的重叠记忆。
Sci Adv. 2022 Jun 24;8(25):eabn7920. doi: 10.1126/sciadv.abn7920. Epub 2022 Jun 22.
6
Annealing effect on UV-illuminated recovery in gas response of graphene-based NO sensors.退火对基于石墨烯的NO传感器气体响应中紫外线照射恢复的影响。
RSC Adv. 2019 Jul 29;9(40):23343-23351. doi: 10.1039/c9ra01295h. eCollection 2019 Jul 23.
7
The Image Identification Application with HfO-Based Replaceable 1T1R Neural Networks.基于氧化铪的可替换1T1R神经网络的图像识别应用
Nanomaterials (Basel). 2022 Mar 25;12(7):1075. doi: 10.3390/nano12071075.
8
Synaptic metaplasticity in binarized neural networks.二值化神经网络中的突触型变异性。
Nat Commun. 2021 May 5;12(1):2549. doi: 10.1038/s41467-021-22768-y.
9
Emerging Materials for Neuromorphic Devices and Systems.用于神经形态设备和系统的新兴材料。
iScience. 2020 Nov 24;23(12):101846. doi: 10.1016/j.isci.2020.101846. eCollection 2020 Dec 18.
10
NeuroMem: Analog Graphene-Based Resistive Memory for Artificial Neural Networks.NeuroMem:基于模拟石墨烯的人工神经网络电阻式存储器。
Sci Rep. 2020 Jun 11;10(1):9473. doi: 10.1038/s41598-020-66413-y.