Liang Xiaoqing, Kong Xiangyu, Lu Sheng-Jie, Huang Yingying, Zhao Jijun, Xu Hong-Guang, Zheng Weijun, Zeng Xiao Cheng
Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Ministry of Education, Dalian 116024, People's Republic of China. Department of Chemistry, University of Nebraska, Lincoln, NE 68588, United States of America.
J Phys Condens Matter. 2018 Aug 22;30(33):335501. doi: 10.1088/1361-648X/aad2bf. Epub 2018 Jul 11.
The structural, electronic and magnetic properties of dual Cr atoms doped germanium anionic clusters, [Formula: see text] (n = 3-14), have been investigated by using photoelectron spectroscopy in combination with density-functional theory calculations. The low-lying structures of [Formula: see text] are determined by DFT based genetic algorithm optimization. For [Formula: see text] with n ⩽ 8, the structures are bipyramid-based geometries, while [Formula: see text] cluster has an opening cage-like structure, and the half-encapsulated structure is gradually covered by the additional Ge atoms to form closed-cage configuration with one Cr atom interior for n = 10 to 14. Meanwhile, the two Cr atoms in [Formula: see text] clusters tend to form a Cr-Cr bond rather than be separated. Interestingly, the magnetic moment of all the anionic clusters considered is 1 μ . Almost all clusters exhibit antiferromagnetic Cr-Cr coupling, except for two clusters, [Formula: see text] and [Formula: see text]. To our knowledge, the [Formula: see text] cluster is the first kind of transition-metal doped semiconductor clusters that exhibit relatively stable antiferromagnetism within a wide size range. The experimental/theoretical results suggest high potential to modify the magnetic behavior of semiconductor clusters through introducing different transition-metal dopant atoms.
通过光电子能谱结合密度泛函理论计算,研究了双铬原子掺杂锗阴离子团簇[化学式:见正文](n = 3 - 14)的结构、电子和磁性性质。基于密度泛函理论的遗传算法优化确定了[化学式:见正文]的低能结构。对于n⩽8的[化学式:见正文],其结构为基于双锥体的几何形状,而[化学式:见正文]团簇具有开口笼状结构,对于n = 10至14,半封装结构逐渐被额外的锗原子覆盖,形成一个铬原子在内部的封闭笼状构型。同时,[化学式:见正文]团簇中的两个铬原子倾向于形成Cr - Cr键而不是分离。有趣的是,所有考虑的阴离子团簇的磁矩均为1μ。除了两个团簇[化学式:见正文]和[化学式:见正文]外,几乎所有团簇都表现出反铁磁Cr - Cr耦合。据我们所知,[化学式:见正文]团簇是第一类在宽尺寸范围内表现出相对稳定反铁磁性的过渡金属掺杂半导体团簇。实验/理论结果表明,通过引入不同的过渡金属掺杂原子来改变半导体团簇的磁行为具有很大潜力。