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硬 X 射线抽运单晶硅中非热熔融的延迟发生。

Delayed Onset of Nonthermal Melting in Single-Crystal Silicon Pumped with Hard X Rays.

机构信息

Lawrence Livermore National Laboratory, 7000 East Avenue, Livermore, California 94550, USA.

SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA.

出版信息

Phys Rev Lett. 2018 Jun 29;120(26):265701. doi: 10.1103/PhysRevLett.120.265701.

Abstract

In this work, we monitor the onset of nonthermal melting in single-crystal silicon by implementing an x-ray pump-x-ray probe scheme. Using the ultrashort pulses provided by the Linac Coherent Light Source (SLAC) and a custom-built split-and-delay line for hard x rays, we achieve the temporal resolution needed to detect the onset of the transition. Our data show no loss of long-range order up to 150±40  fs from photoabsorption, which we interpret as the time needed for the electronic system to equilibrate at or above the critical nonthermal melting temperature. Once such equilibration is reached, the loss of long-range atomic order proceeds inertially and is completed within 315±40  fs from photoabsorption.

摘要

在这项工作中,我们通过实施 X 射线泵浦- X 射线探测方案来监测单晶硅中非热熔融的开始。我们利用直线感应加速器相干光源(SLAC)提供的超短脉冲和用于硬 X 射线的定制分束延迟线,实现了探测相变开始所需的时间分辨率。我们的数据显示,在光吸收后 150±40fs 内没有长程有序的损失,我们将其解释为电子系统达到或超过临界非热熔融温度所需的时间。一旦达到这种平衡,长程原子有序的损失就会惯性地进行,并在光吸收后 315±40fs 内完成。

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