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一种用于建立幻数簇ε的定量工具,应用于小硅簇Si。

A quantitative tool to establish magic number clusters, ε, applied in small silicon clusters, Si.

作者信息

Fernandes Gabriel F S, Machado Francisco B C, Ferrão Luiz F A

机构信息

Departamento de Química, Instituto Tecnológico de Aeronáutica, São José dos Campos, SP, 12228-900, Brazil.

出版信息

J Mol Model. 2018 Jul 13;24(8):203. doi: 10.1007/s00894-018-3748-y.

DOI:10.1007/s00894-018-3748-y
PMID:30006676
Abstract

The present work focuses on establishing a function to rank the stability of small silicon clusters to characterize their magic numbers. This function is composed by a thermodynamic descriptor, the atomization Gibbs free energy, and indirect kinetic descriptors, the highest occupied molecular orbital energy and the lowest excitation energy of each system. The silicon clusters geometries were optimized using density functional theory within a hybrid meta-GGA approximation (M06), while the electronic energy was corrected by single-point calculation using CASPT2 level of theory to obtain the molecular properties. Both methodologies were combined with polarized diffused triple zeta, 6-311++G(3df,3pd), basis set for all atoms. Some molecular properties and their combinations were considered to create the aforementioned function to represent the clusters chemical stability and their magic numbers. The chosen stability ranking function, called ε, presents results in agreement with the previous mass spectrometry experimental data identifying 4, 6, 7 and 10 as magic numbers for small silicon clusters. We believe this stability ranking function can be useful to study other intramolecular atomic and molecular clusters. Graphical abstract Stability ranking function, ε, applied on Si (n = 2 - 11) clusters showing Fukui's functions for the Si (n = 2 - 11) obtained by the electronic density difference through CASPT2//M06/6-311++G(3df,3pd) with an isosurface value equal to 0.003.

摘要

本工作着重于建立一个函数,用于对小硅团簇的稳定性进行排序,以表征它们的幻数。该函数由一个热力学描述符——原子化吉布斯自由能,以及间接动力学描述符——每个体系的最高占据分子轨道能量和最低激发能组成。使用混合元广义梯度近似(M06)下的密度泛函理论对硅团簇的几何结构进行了优化,同时使用CASPT2理论水平通过单点计算对电子能量进行了校正,以获得分子性质。这两种方法都与针对所有原子的极化弥散三重ζ基组6-311++G(3df,3pd)相结合。考虑了一些分子性质及其组合,以创建上述函数来表示团簇的化学稳定性及其幻数。所选择的稳定性排序函数,称为ε,其结果与先前的质谱实验数据一致,该实验数据确定4、6、7和10为小硅团簇的幻数。我们相信这个稳定性排序函数对于研究其他分子内原子和分子团簇可能有用。图形摘要:应用于Si (n = 2 - 11)团簇的稳定性排序函数ε,展示了通过CASPT2//M06/6-311++G(3df,3pd)利用电子密度差获得的Si (n = 2 - 11)的福井函数,等值面值等于0.003。

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