Department of Physics , Southern University of Science and Technology , Shenzhen , Guangdong 518055 , China.
Laboratory of Synchrotron Radiation , Institute of High Energy Physics, Chinese Academy of Sciences , Beijing 100039 , China.
ACS Appl Mater Interfaces. 2018 Sep 12;10(36):30803-30810. doi: 10.1021/acsami.8b06949. Epub 2018 Aug 31.
The strain effect on charge transfer in correlated oxide LaSrMnO/NdNiO (LSMO/NNO) heterostructures is investigated. This is achieved by carefully tailoring the strain on the two layers using various substrates. In contrast to bare LSMO films, the strain dependence of the enhanced magnetic moment of the LSMO/NNO bilayers strongly suggests that the charge transfer can be controlled via strain engineering in complex oxide heterostructures. Furthermore, our study also reveals that the coercive field, exchange bias, and conductivity are dramatically affected by the strain-modulated charge transfer in LSMO/NNO heterostructures. Our work thus points out a new path to control electronic states in oxide heterostructures to advance the use of interfaces in oxide-based electronics.
研究了关联氧化物 LaSrMnO/NdNiO（LSMO/NNO）异质结构中应变对电荷转移的影响。这是通过使用各种衬底仔细调整两层的应变来实现的。与裸 LSMO 薄膜不同，LSMO/NNO 双层的增强磁矩的应变依赖性强烈表明，在复杂氧化物异质结构中可以通过应变工程来控制电荷转移。此外，我们的研究还表明，矫顽力、交换偏置和电导率受到 LSMO/NNO 异质结构中应变调制电荷转移的显著影响。因此，我们的工作指出了控制氧化物异质结构中电子态的新途径，以推进基于氧化物的电子学中界面的应用。
