Key Laboratory of UV Light Emitting Materials and Technology under Ministry of Education, Northeast Normal University, Changchun 130024, P. R. China.
Nanoscale. 2018 Oct 4;10(38):18135-18144. doi: 10.1039/c8nr05336g.
Stretchable and conformable synapse memristors that can emulate the behaviour of the biological neural system and well adhere onto the curved surfaces simultaneously are desirable for the development of imperceptible wearable and implantable neuromorphic computing systems. Previous synapse memristors have been mainly limited to rigid substrates. Herein, a stretchable and conformable memristor with fundamental synaptic functions including potentiation/depression characteristics, long/short-term plasticity (STP and LTP), "learning-forgetting-relearning" behaviour, and spike-rate-dependent and spike-amplitude-dependent plasticity is demonstrated based on highly elastic Ag nanoparticle-doped thermoplastic polyurethanes (TPU : Ag NPs) and polydimethylsiloxane (PDMS). The memristor can be well operated even at 60% strain and can be well conformed onto the curved surfaces. The formed conductive filament (CF) obtained from the movement of Ag nanoparticle clusters under the locally enhanced electric field gives rise to resistance switching of our memristor. These results indicate a feasible strategy to realize stretchable and conformable synaptic devices for the development of new-generation artificial intelligence computers.
可拉伸且顺应的突触忆阻器可以模拟生物神经系统的行为，同时很好地贴合在曲面上，这对于开发不可察觉的可穿戴和可植入神经形态计算系统是非常理想的。以前的突触忆阻器主要局限于刚性衬底。在此，基于高弹性的 Ag 纳米粒子掺杂热塑性聚氨酯（TPU：Ag NPs）和聚二甲基硅氧烷（PDMS），展示了具有基本突触功能的可拉伸和顺应的忆阻器，包括增强/抑制特性、长/短期可塑性（STP 和 LTP）、“学习-遗忘-再学习”行为以及与尖峰率和尖峰幅度相关的可塑性。即使在 60%的应变下，忆阻器也能很好地工作，并能很好地贴合在曲面上。在局部增强电场下 Ag 纳米粒子簇的移动形成的导电丝（CF）导致我们的忆阻器的电阻切换。这些结果表明了一种实现可拉伸和顺应的突触器件的可行策略，这对于开发新一代人工智能计算机是非常有意义的。
