Arz Marius I, Schnakenburg Gregor, Meyer Andreas, Schiemann Olav, Filippou Alexander C
Institute of Inorganic Chemistry , University of Bonn , Gerhard-Domagk-Str. 1 , D-53121 , Bonn , Germany . Email:
Institute of Physical and Theoretical Chemistry , University of Bonn , Wegelerstr. 12 , D-53115 , Bonn , Germany.
Chem Sci. 2016 Aug 1;7(8):4973-4979. doi: 10.1039/c6sc01569g. Epub 2016 May 9.
Cyclic voltammetric studies of the hydridodisilicon(0,II) borate [(Idipp)(H)Si[double bond, length as m-dash]Si(Idipp)][B(Ar)] ([B(Ar)], Idipp = C[N(CH-2,6-Pr)CH], Ar = CH-3,5-(CF)) reveal a reversible one-electron reduction at a low redox potential ( = -2.15 V Fc/Fc). Chemical reduction of [B(Ar)] with KC affords selectively the green, room-temperature stable mixed-valent disilicon(0,I) hydride Si(H)(Idipp) (), in which the highly reactive SiH molecule is trapped between two N-heterocyclic carbenes (NHCs). The molecular and electronic structure of was investigated by a combination of experimental and theoretical methods and reveals the presence of a π-type radical featuring a terminal bonded H atom at a flattened trigonal pyramidal coordinated Si center, that is connected a Si-Si bond to a bent two-coordinated Si center carrying a lone pair of electrons. The unpaired electron occupies the Si[double bond, length as m-dash]Si π* orbital leading to a formal Si-Si bond order of 1.5. Extensive delocalization of the spin density occurs conjugation with the coplanar arranged NHC rings with the higher spin density lying on the site of the two-coordinated silicon atom.
硼氢化二硅(0,II)[(Idipp)(H)Si[双键,键长如m破折号]Si(Idipp)][B(Ar)]([B(Ar)],Idipp = C[N(CH-2,6-Pr)CH],Ar = CH-3,5-(CF))的循环伏安研究表明,在低氧化还原电位( = -2.15 V Fc/Fc)下发生可逆的单电子还原。用KC对[B(Ar)]进行化学还原可选择性地得到绿色、室温稳定的混合价二硅(0,I)氢化物Si(H)(Idipp)(),其中高反应性的SiH分子被困在两个N-杂环卡宾(NHCs)之间。通过实验和理论方法相结合对的分子和电子结构进行了研究,结果表明存在一种π型自由基,在扁平的三角锥配位Si中心处有一个末端键合的H原子,该中心通过Si-Si键与一个带有孤对电子的弯曲双配位Si中心相连。未成对电子占据Si[双键,键长如m破折号]Si π*轨道,导致形式上的Si-Si键级为1.5。自旋密度通过与共面排列的NHC环共轭而发生广泛离域,较高的自旋密度位于双配位硅原子的位置上。