MOE Key Laboratory of Theoretical and Computational Photochemistry, and College of Chemistry, Beijing Normal University, Beijing, 100875, P.R. China.
Division of Multidisciplinary Research, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, 100049, P.R. China.
Chemistry. 2018 Dec 20;24(72):19289-19299. doi: 10.1002/chem.201804072. Epub 2018 Nov 27.
A DFT mechanistic study is undertaken on the functionalization of CO to form C-C, C-N, C-S, and C-O bonds promoted by trivalent uranium complexes (Tp*) UR [Tp*=hydrotris(3,5-dimethylpyrazolyl)-borate ligand, R= -C≡CPh (Cpda-CC), -C≡CSiMe (Cpda-CSi), -NHPh (Cpda-N), -SPh (Cpda-S), and -OPh (Cpda-O)]. These model systems are similar in view of their two-step reaction mechanisms, that is, the insertion of CO into the U-E (E=C, N, O, S) bond to form a [U-κ -O C] intermediate, followed by the reorientation of the carboxylate group to coordinate with the U atom in the κ manner (Cpdb-X, X=CC, CSi, N, S, O). However, the free energy barriers to the rate-determining steps are substantially different, increasing in the order Cpda-S<Cpda-CC<Cpda-Csi<Cpda-N<Cpda-O, which suggests that the bond property of the U-E bonds and the nucleophilicity of the R groups govern the reactivity of the trivalent U complexes. The insertion product may then be silylated in the presence of trimethylsilyl iodide. Two potential mechanisms have been investigated with the -O CR group attacking the Si atom from the side cis (frontside) or trans (backside) to the I atom. The backside pathway was found to be more feasible in view of the free energy barriers and thermicity.
采用密度泛函理论(DFT)方法对三价铀配合物(Tp*)UR [Tp*=三(3,5-二甲基吡唑基)硼氢配体,R= -C≡CPh(Cpda-CC),-C≡CSiMe(Cpda-CSi),-NHPh(Cpda-N),-SPh(Cpda-S),-OPh(Cpda-O)]促进 CO 功能化形成 C-C、C-N、C-S 和 C-O 键的反应机理进行了研究。这些模型体系具有相似的两步反应机理,即 CO 插入 U-E(E=C、N、O、S)键形成[U-κ -OC]中间体,然后羧酸根基团重新定向以κ方式与 U 原子配位(Cpdb-X,X=CC、CSi、N、S、O)。然而,速率决定步骤的自由能垒有很大的不同,按 Cpda-S<Cpda-CC<Cpda-CSi<Cpda-N<Cpda-O 的顺序增加,这表明 U-E 键的键性质和 R 基团的亲核性控制三价 U 配合物的反应性。然后,在三甲基碘化硅的存在下,插入产物可能被硅烷基化。研究了两种可能的机制,即-O CR 基团从 I 原子的顺式(正面)或反式(背面)攻击 Si 原子。考虑到自由能垒和热力学,背面途径更为可行。